International Papers and Books

…of the last 20 years

2020

 
Maria Ruzzarin, Carlo De Santi, Feng Yu, Muhammad Fahlesa Fatahilah, Klaas Strempel, Hutomo Suryo Wasisto, Andreas Waag, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator Applied Physics Letters 117 (20), 203501
 
Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
 
 
Microelectronics Reliability 114, 113786
A Caria, C De Santi, F Zamperetti, X Huang, H Fu, H Chen, Y Zhao, A Neviani, G Meneghesso, E Zanoni, M MeneghiniGaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress” Microelectronics Reliability 114, 113802
Microelectronics Reliability 114, 113830
 
 
 
M Ruzzarin, K Geens, M Borga, H Liang, S You, B Bakeroot, S Decoutere, C De Santi, A Neviani, M Meneghini, G Meneghesso, E Zanoni Exploration of gate trench module for vertical GaN devices Microelectronics Reliability 114, 113828
 
Matteo Bertoncello, Fabio Casulli, Marco Barbato, Elisa Artegiani, Alessandro Romeo, Nicola Trivellin, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso
Microelectronics Reliability 114, 113847
 
 
 
 
IEEE Journal of Quantum Electronics 57 (1), 1-8
 
 
Benito Gonzalez, Carlo De Santi, Fabiana Rampazzo, Matteo Meneghini, Antonio Nunez, Enrico Zanoni, Gaudenzio Meneghesso Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon”  IEEE Transactions on Electron Devices 67 (12), 5408-5414
 
Andrea Minetto, Bernd Deutschmann, Nicola Modolo, Arianna Nardo, Matteo Meneghini, Enrico Zanoni, Luca Sayadi, Gerhard Prechtl, Sebastien Sicre, Oliver Häberlen Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress  IEEE Transactions on Electron Devices 67 (11), 4602-4605
Carlo De Santi, Luca Pavanello, Arianna Nardo, Claudio Verona, Gianluca Verona Rinati, Domenico Cannata, Fabio Di Pietrantonio, Gaudenzio Meneghesso, Enrico Zanoni, Matteo MeneghiniCause and effects of OFF-state degradation in hydrogen-terminated diamond MESFETs” IEEE Transactions on Electron Devices 67 (10), 4021-4026
 
Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Matteo Meneghini, Michele Forzan, Fabrizio Dughiero, Enrico Zanoni, Gaudenzio Meneghesso Full Optical Contactless Thermometry Based on LED Photoluminescence  IEEE Transactions on Instrumentation and Measurement 70, 1-8
 
IEEE Transactions on Electron Devices 67 (10), 3954-3959
 
 
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
 
 
Arianna Nardo, Matteo Meneghini, Alessandro Barbato, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Sebastien Sicre, Luca Sayadi, Gerhard Prechtl, Gilberto Curatola  Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements Applied Physics Express 13 (7), 074003
 
Matteo Meneghini, Carlo De Santi, Alberto Tibaldi, Marco Vallone, Francesco Bertazzi, Gaudenzio Meneghesso, Enrico Zanoni, Michele Goano
 
Elena Fabris, Carlo De Santi, Alessandro Caria, Kalparupa Mukherjee, Kazuki Nomoto, Zongyang Hu, Wenshen Li, Xiang Gao, Hugues Marchand, Debdeep Jena, Huili Grace Xing, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
 
Alessandro Barbato, Marco Barbato, Matteo Meneghini, Marco Silvestri, Thomas Detzel, Oliver Haeberlen, Giorgio Spiazzi, Gaudenzio Meneghesso, Enrico Zanoni
 
 
Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 2020 IEEE International Reliability Physics Symposium (IRPS)
 
Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michel Simon-Najasek, David Poppitz “Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling2020 IEEE International Reliability Physics Symposium (IRPS) 1-10
 
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi
 
M Buffolo, E Davanzo, C De Santi, N Trivellin, G Meneghesso, E Zanoni, M Meneghini Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress”
IEEE Transactions on Device and Materials Reliability 20 (2), 429-435
 

Matteo Meneghini, Elena Fabris, Maria Ruzzarin, Carlo De Santi, Kazuki Nomoto, Zhenqi Hu, Wenshen Li, Xingya Gao, Debdeep Jena, Huili Grace Xing, Min Sun, Tomas Palacios, Gaudenzio Meneghesso, Enrico ZanoniDegradation Mechanisms of GaN‐Based Vertical Devices: A Review”  Physica status solidi (a) 217 (7), 1900750

 
C De Santi, A Nardo, MH Wong, K Goto, A Kuramata, S Yamakoshi, H Murakami, Y Kumagai, M Higashiwaki, G Meneghesso, E Zanoni, M Meneghini Charge trapping and degradation of Ga2O3 isolation structures for power electronics”  Oxide-based Materials and Devices XI Vol. 11281 Pag. 112810L International Society for Optics and Photonics
 
Carlo De Santi, L Pavanello, A Nardo, C Verona, G Verona Rinati, G Meneghesso, E Zanoni, M Meneghini Degradation effects and origin in H-terminated diamond MESFETs”  Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII Vol. 11279 Pag. 112791X International Society for Optics and Photonics
 
Light-Emitting Devices, Materials, and Applications XXIV,Vol. 11302 Pag. 113020X International Society for Optics and Photonics
 
Nicola Trivellin, Alberto Pizzolato, Matteo Meneghini, Fabrizio Dughiero, Michele Forzan, Enrico Zanoni, Gaudenzio Meneghesso  “Analysis and design of extreme intensity irradiation devices for research applications ” Light-Emitting Devices, Materials, and Applications XXIV Volume 11302, Pag.113020C International Society for Optics and Photonics
 
Matteo Buffolo, Fabio Samparisi, Carlo De Santi, Daehwan Jung, Justin Norman, John E Bowers, Robert W Herrick, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini “Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processesNovel In-Plane Semiconductor Lasers XIX Vol. 11301 Pag. 113010L International Society for Optics and Photonics
 
F Piva, C De Santi, M Deki, M Kushimoto, H Amano, H Tomozawa, N Shibata, G Meneghesso, E Zanoni, M Meneghini Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurementsGallium Nitride Materials and Devices XV Vol. 11280 Pag. 1128015 International Society for Optics and Photonics
 
Alessandro Caria, Carlo De Santi, Filippo Zamperetti, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
“Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition” Gallium Nitride Materials and Devices XV Vol. 11280 Pagine 112800E ,International Society for Optics and Photonics
 
Gallium Nitride Materials and Devices XV Vol. 11280 P. 112800Z International Society for Optics and Photonics
 
Davide Bisi, Steven Wienecke, Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Stacia Keller, Matthew Guidry, Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Umesh K Mishra, Enrico Zanoni
“Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures” IEEE Electron Device Letters  Volume 41, Issue 3, 345-348 2020/1/22
 
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Paolo Pavan, Giovanni Verzellesi
 
Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
 
Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Materials, Volume 13, N.19, pag. 4271, 2020

Mehdi Rzin , Matteo Meneghini, Fabiana Rampazzo, Veronica Gao Zhan, Daniele Marcon, Jan Grünenpütt, Helmut Jung, Benoit Lambert, Klaus Riepe,Hervé Blanck, Andreas Graff, Frank Altmann , Michel Simon-Najasek, David Poppitz, Gaudenzio Meneghesso and Enrico Zanoni   “On-Wafer Fast Evaluation of Failure Mechanismof 0.25-µm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion”  , IEEE Transactions on Electron Devices 67 (7), 2765-2770

Elena Fabris , Carlo De Santi , Alessandro Caria, Kalparupa Mukherjee , Kazuki Nomoto, Zongyang Hu , Wenshen Li , Xiang Gao, Hugues Marchand, Debdeep Jena ,
Huili Grace Xing , Gaudenzio Meneghesso , Enrico Zanoni, and Matteo MeneghiniImpact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction“IEEE Transactions on Electron Devices  June 2020,

Sharma, C., Modolo, N., Wu, T.-L., Meneghini, M., Meneghesso, G., Zanoni, E., Visvkarma, A.K., Vinayak, S., Singh, R. “Understanding γ-Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model“IEEE Transactions on Electron Devices Volume 67, Issue 3, March 2020, Article number 8976298, Pages 1126-1131

Bisi, D., Meneghesso, G., Mishra, U.K., Zanoni, E., Wienecke, S., Romanczyk, B., Li, H., Ahmadi, E., Keller, S., Guidry, M., De Santi, C., Meneghini, M. Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures” IEEE Electron Device Letters Volume 41, Issue 3, March 2020, Article number 8966505, Pages 345-348

Borga, M., Meneghini, M. , Zanoni, E., De Santi, C., Stoffels, S., Bakeroot, B., Li, X., Zhao, M., Van Hove, M., Decoutere, S., Meneghesso, G.Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications“IEEE Transactions on Electron Devices Volume 67, Issue 2, February 2020, Article number 8966597, Pages 595-599

Borga, M., Mukherjee, K., De Santi, C., Stoffels, S., Geens, K., You, S., Bakeroot, B., Decoutere, S., Meneghesso, G., Zanoni, E., Meneghini, M. “Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices“Applied Physics Express Volume 13, Issue 2, 1 February 2020, Article number 024006

Mukherjee, K., Borga, M., Ruzzarin, M., De Santi, C., Stoffels, S., You, S., Geens, K., Liang, H., Decoutere, S., Meneghesso, G., Zanoni, E Meneghini, M. “Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs“Applied Physics Express Volume 13, Issue 2, 1 February 2020, Article number 024004

Meneghini, M., Fabris, E., Ruzzarin, M, De Santi, C., Nomoto, K., Hu, Z., Li, W., Gao, X., Jena, D., Xing, H.G., Sun, M., Palacios, T., Meneghesso, G., Zanoni, E.”Degradation Mechanisms of GaN-Based Vertical Devices: A Review” Physica Status Solidi (A) Applications and Materials Science 2020, Article number 1900750

Tajalli, A., Borga, M., Meneghini, M, De Santi, C., Benazzi, D., Besendörfer, S. Püsche, R., Derluyn, J., Degroote, S., Germain, M., Kabouche, R., Abid, I., Meissner, E., Zanoni, E., Medjdoub, F., Meneghesso, G. “Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment” in Micromachines Volume 11, Issue 1, 1 January 2020, Article number 101

M. Buffolo, F. Samparisi, L. Rovere, C. De Santi, D. Jung, J. Norman, J. E. Bowers, R.W. Herrick, G. Meneghesso, E. Zanoni, and  M. Meneghini, “Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon,” in IEEE Journal of Selected Topics in Quantum Electronics, vol. 26, no. 2, pp. 1-8, March-April 2020, Art no. 1900208, ISSN: 1077-260X, doi: 10.1109/JSTQE.2019.2939519

2019

E. Artegiani, M. Leoncini, M. Barbato, M. Meneghini, G. Meneghesso, M. Cavallini, A. Romeo,Analysis of magnesium zinc oxide layers for high efficiency CdTe devices, Thin Solid Films 672 (2019) 22–25, ISSN: 00406090, doi: 10.1016/j.tsf.2019.01.004

M. Leoncini, E. Artegiani, L. Lozzi, M. Barbato, M. Meneghini, G. Meneghesso, M.Cavallini, A. Romeo, Difluorochloromethane treated thin CdS buffer layers for improved CdTe solar cells, Thin Solid Films 672 (2019) 7–13, ISSN: 00406090, doi: 10.1016/j.tsf.2019.01.003

E. Fabris, M.Meneghini, C. De Santi, M. Borga, Y. Kinoshita, K. Tanaka, H. Ishida, T.Ueda, G. Meneghesso, and E. Zanoni, “Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs,” in IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 337-342, Jan. 2019, ISSN: 0018-9383, doi: 10.1109/TED.2018.2877905

Stockman, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, P. Moens, and B. Bakeroot, The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors,” in IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 372-377, Jan. 2019, ISSN: 0018-9383, doi: 10.1109/TED.2018.2881325

M. Buffolo, F. Samparisi, C. De Santi, D. Jung, J. Norman, J. E. Bowers, R. W. Herrick, G. Meneghesso, E. Zanoni, and M. Meneghini, Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers,” in IEEE Journal of Quantum Electronics, vol. 55, no. 3, 2000607, June 2019, ISSN: 0018-9197, doi: 10.1109/JQE.2019.2909963

M. Ruzzarin, M. Meneghini, C. de Santi, A. Neviani, F. Yu, K. Strempel, M. F. Fatahilah, B. Witzigmann, H. S. Wasisto, A. Waag, G. Meneghesso, and E. Zanoni, Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors, in IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2119-2124, May 2019, ISSN: 00189383, doi: 10.1109/TED.2019.2904851

M.Ge, M. Ruzzarin, D. Chen, H. Lu, X. Yu, J. Zhou, C. De Santi, R. Zhang, Y. Zheng, M. Meneghini, G. Meneghesso, and E. Zanoni,Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors, in IEEE Electron Device Letters, vol. 40, no. 3, pp. 379-382, March 2019, ISSN: 07413106, doi: 10.1109/LED.2019.2893290

De Santi, M. Buffolo, N. Renso, A. Neviani, G. Meneghesso, E. Zanoni, and M. Meneghini, Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs, Appl. Phys. Express 12, 052007 (2019), ISSN: 18820778, doi: 10.7567/1882-0786/ab10e3

M.Fahlesa Fatahilah, F. Yu, K. Strempel, F. Römer, D. Maradan, M. Meneghini, A. Bakin, F. Hohls, H. Werner Schumacher, B.Witzigmann, A.Waag, and H. Suryo Wasisto, Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics, Sci Rep 9, 10301 (2019), ISSN: 20452322, doi: 10.1038/s41598-019-46186-9

E. Fabris, C. De Santi, A. Caria, K. Nomoto, Z. Hu, W. Li, X. Gao, D. Jena, H.G. Xing, G. Meneghesso, E. Zanoni, and M. Meneghini, Breakdown Walkout in Polarization-Doped Vertical GaN Diodes, in IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4597-4603, Nov. 2019, ISSN: 0018-9383, doi: 10.1109/TED.2019.2943014

M. Bertoncello, M. Barbato, M. Meneghini, E. Artegiani, A. Romeo, G. Meneghesso, Reliability investigation on CdTe solar cells submitted to short-term thermal stress, Microelectronics Reliability 100-101 (2019) 113490, ISSN: 00262714, doi: 10.1016/j.microrel.2019.113490

K.Mukherjee, C. De Santi, M. Rzin, Z. Gao, G. Meneghesso, M. Meneghini, E. Zanoni, Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs, Microelectronics Reliability 100-101 (2019) 113464, ISSN: 00262714, doi: 10.1016/j.microrel.2019.113464

Z. Gao, M. Meneghini, F. Rampazzo, M. Rzin, C. De Santi, G. Meneghesso, E. Zanoni, Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration, Microelectronics Reliability 100–101 (2019) 113489, ISSN: 00262714, doi: 10.1016/j.microrel.2019.113489

M. Ruzzarin, C. De  Santi, F. Chiocchetta, M. Sun, T. Palacios, E. Zanoni, G. Meneghesso, M. Meneghini, Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias, Microelectronics Reliability 100–101 (2019) 113488, ISSN: 00262714, doi: 10.1016/j.microrel.2019.113488

C. Sharma, N. Modolo, H. Chen, Y. Tseng, S. Tang, M. Meneghini, G. Meneghesso, E. Zanoni, R. Singh, T. Wu, Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation”, Microelectronics Reliability 100–101 (2019) 113349, ISSN: 00262714, doi: 10.1016/j.microrel.2019.06.041

F. Piva, C. De Santi, M. Deki, M. Kushimoto, H. Amano, H. Tomozawa, N. Shibata, G. Meneghesso, E. Zanoni, M. Meneghini, “Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects, Microelectronics Reliability 100–101 (2019) 113418, ISSN: 00262714, doi: 10.1016/j.microrel.2019.113418

M.Rzin, M. Meneghini, F. Rampazzo, V. Gao Zhan, C. De Santi, R. Kabouche, M. Zegaoui, F. Medjdoub, G. Meneghesso, E. Zanoni, Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs, Microelectronics Reliability 100–101 (2019) 113388, ISSN: 00262714, doi: 10.1016/j.microrel.2019.06.080

M. Borga, M. Meneghini, D. Benazzi, E. Canato, R. Püsche, J. Derluyn, I. Abid, F. Medjdoub, G. Meneghesso, E. Zanoni, Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment, Microelectronics Reliability 100–101 (2019) 113461, ISSN: 00262714, doi: 10.1016/j.microrel.2019.113461

E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, A. Stockman, A. Banerjee, P. Moens, E. Zanoni, G. Meneghesso,ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping, Microelectronics Reliability 100–101 (2019) 113334, ISSN: 00262714, doi: 10.1016/j.microrel.2019.06.026

C.De Santi, A. Nardo, M. H. Wong, K. Goto, A. Kuramata, S. Yamakoshi, H. Murakami, Y. Kumagai, M. Higashiwaki, G. Meneghesso, E. Zanoni, M. Meneghini, Stability and degradation of isolation and surface in Ga2O3 devices, Microelectronics Reliability 100–101 (2019) 113453, ISSN: 00262714, doi: 10.1016/j.microrel.2019.113453

D. Monti, C. De Santi, S. Da Ruos, F. Piva, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni, and M. Meneghini, High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes,” in IEEE Transactions on Electron Devices, vol. 66, no. 8, pp. 3387-3392, Aug. 2019, ISSN: 00189383, doi: 10.1109/TED.2019.2920521

F.Masin, M. Meneghini, E. Canato, C. De Santi, A. Stockman, E. Zanoni, P. Moens, and G. Meneghesso, Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress”, Appl. Phys. Lett. 115, 052103 (2019), ISSN: 00036951, doi: 10.1063/1.5109301

N.Trivellin, D. Monti, F. Piva, M. Buffolo, C. De Santi, E. Zanoni, G. Meneghesso, and M. Meneghini,Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence, Jpn. J. Appl. Phys. 58 SCCC19 (2019), ISSN: 00214922, doi: 10.7567/1347-4065/ab1393

Rizzo, A., Lamberti, F., Buonomo, M., Wrachien, N., Torto, L., Lago, N., Sansoni, S., Pilot, R., Prato, M., Michieli, N., Meneghetti, M., Meneghesso, G., Cester, A. “Understanding lead iodide perovskite hysteresis and degradation causes by extensive electrical characterization”, (2019) Solar Energy Materials and Solar Cells, 189, pp. 43-52.  DOI: 10.1016/j.solmat.2018.09.021

Ahopelto, J., Ardila, G., Baldi, L., Balestra, F., Belot, D., Fagas, G., De Gendt, S., Demarchi, D., Fernandez-Bolaños, M., Holden, D., Ionescu, A.M., Meneghesso, G., Mocuta, A., Pfeffer, M., Popp, R.M., Sangiorgi, E., Sotomayor Torres, C.M. “NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration”,  (2019) Solid-State Electronics, .  DOI: 10.1016/j.sse.2019.03.014

F. Lamberti, E. Cescon, R. Sorrentino, A. Rizzo, T. Gatti, E. Menna, G.Meneghesso, M. Meneghetti, A.Petrozza, L. Franco, “Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells”,  Chem, Volume 5, Issue 7, 11 July 2019, Pages 1806-1817 https://doi.org/10.1016/j.chempr.2019.04.003

M. Zheng, F.Lamberti, L.Franco, E. Collini, I. Fortunati,G. Bottaro, G. Daniel,  R. Sorrentino, A. Minotto, A. Kukovecz,E. Menna, S. Silvestrini, C. Durante, F. Cacialli, G. Meneghesso, M.Maggini, T. Gatti,  “A film-forming graphene/diketopyrrolopyrrole covalent hybrid with far-redoptical features: Evidence of photo-stability” Synthetic Metals 258 (2019) 116201 https://doi.org/10.1016/j.synthmet.2019.116201

F. Lamberti, T. Gatti, E.Cescon, R. Sorrentino, A. Rizzo, E.Menna, G. Meneghesso, M. Meneghetti, A.Petrozza, and L. Franco, “Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole- Transporting Layers for Perovskite Solar Cells”, Chem 5, (2019) 1–12 doi: 10.1016/j.chempr.2019.04.003

2018

De Santi, M. Meneghini, A. Tibaldi, M. Vallone, M. Goano, F. Bertazzi, G. Verzellesi, G. Meneghesso, and E. Zanoni, “Physical mechanisms limiting the performance and the reliability of GaN-based LEDs”, Book chapter in a book entitled “Nitride Semiconductor Light-Emitting Diodes (LEDs) (Second Edition)” edited by Editor(s): JianJang Huang, Hao-Chung Kuo, Shyh-Chiang Shen, In Woodhead Publishing Series in Electronic and Optical Materials, Woodhead Publishing, 2018, Pages 455-489, ISBN: 9780081019429, doi: 10.1016/B978-0-08-101942-9.00014-9

C.De Santi, M. Meneghini, A. Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, B. Kalinic, T. Cesca, G. Meneghesso, E. Zanoni, “GaN-Based Laser Wireless Power Transfer System”, Materials 2018, 11 (1), 153, ISSN: 19961944, doi: 10.3390/ma11010153

H.Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, R. Chu, C. De Santi, M. Merlyne De Souza, S. Decoutere, L. Di Cioccio, B. Eckardt, T. Egawa, P. Fay, J. J. Freedsman, L. Guido, O. Häberlen, G. Haynes, T. Heckel, D. Hemakumara, P. Houston, J. Hu, M. Hua, Q. Huang, A. Huang, S. Jiang, H. Kawai, D. Kinzer, M. Kuball, A. Kumar, K. B. Lee, X. Li, D. Marcon, M. März, R. McCarthy, G. Meneghesso, M. Meneghini, E. Morvan, A. Nakajima, E. M. S. Narayanan, S. Oliver, T. Palacios, D. Piedra, M. Plissonnier, R. Reddy, M. Sun, I. Thayne, A. Torres, N. Trivellin, V. Unni, M. J. Uren, M. Van Hove, D. J. Wallis, J. Wang, J. Xie, S. Yagi, S. Yang, C. Youtsey, R. Yu, E. Zanoni, S. Zeltner, Y. Zhang, “The 2018 GaN power electronics roadmap”, TOPICAL REVIEW, J. Phys. D: Appl. Phys. 51 (2018) 163001, Title of contribution: “Reliability of GaN power devices: normally-on and normally-off”, Authors of contribution: E. Zanoni, M. Borga, C. De Santi, M. Meneghini, N. Trivellin, G. Meneghesso, pp.18-20, ISSN: 00223727, doi: 10.1088/1361-6463/aaaf9d

I.Rossetto, M. Meneghini, C. De Santi, S. Pandey, M. Gajda, G. A. M Hurkx, J. Croon, J. Šonský, G. Meneghesso, E. Zanoni, “2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal,” in IEEE Transactions on Electron Devices, vol. 65, no. 4, pp. 1303-1307, April 2018, ISSN: 00189383, doi: 10.1109/TED.2018.2802449

N.Trivellin, D. Barbisan, D. Badocco, P. Pastore, G. Meneghesso, M. Meneghini, E. Zanoni, G. Belgioioso, A. Cenedese, “Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project”, Sensors 2018, 18(4), 1130, ISSN: 14248220, doi: 10.3390/s18041130

C.De Santi, M. Meneghini, G. Meneghesso and E. Zanoni, “Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications,” in IET Power Electronics, vol. 11, no. 4, pp. 668-674, 2018, ISSN: 17554535, doi: 10.1049/iet-pel.2017.0403

M.Meneghini, A. Tajalli, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso, “Trapping phenomena and degradation mechanisms in GaN-based power HEMTs”, Materials Science in Semiconductor Processing 78 (2018) 118-126, ISSN: 13698001, doi: 10.1016/j.mssp.2017.10.009

D.Bisi, C. De Santi, M. Meneghini, S. Wienecke, M. Guidry, H. Li, E. Ahmadi, S. Keller, U. K. Mishra, G. Meneghesso, E. Zanoni, “Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs,” in IEEE Electron Device Letters, vol. 39, no. 7, pp. 1007-1010, July 2018, ISSN: 0741-3106, doi: 10.1109/LED.2018.2835517

M.Borga, M. Meneghini, S. Stoffels, X. Li, N. Posthuma, M. Van Hove, S. Decoutere, G. Meneghesso, E. Zanoni, “Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs,” in IEEE Transactions on Electron Devices, vol. 65, no. 7, pp. 2765-2770, July 2018, ISSN: 0018-9383, doi: 10.1109/TED.2018.2830107

M.Ruzzarin, M. Meneghini, A. Barbato, V. Padovan, O. Haeberlen, M. Silvestri, T. Detzel, G. Meneghesso, E. Zanoni, “Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress,” in IEEE Transactions on Electron Devices, vol. 65, no. 7, pp. 2778-2783, July 2018, ISSN: 0018-9383, doi: 10.1109/TED.2018.2836460

M.Buffolo, C. De Santi, M. Albertini, D. Carbonera, G. A. Rizzi, G. Granozzi, G. Meneghesso, E. Zanoni, and M. Meneghini, “Reliability of Blue-Emitting Eu2+-Doped Phosphors for Laser-Lighting Applications”, Materials 2018, 11(9), 1552, ISSN: 1996-1944, doi: 10.3390/ma11091552

Trivellin, M. Meneghini, M. Buffolo, G. Meneghesso, and E. Zanoni, “Failures of LEDs in Real-World Applications: A Review,” in IEEE Transactions on Device and Materials Reliability, vol. 18, no. 3, pp. 391-396, Sept. 2018, ISSN: 1530-4388, doi: 10.1109/TDMR.2018.2852000

M. Rzin, A. Chini, C. De Santi, M. Meneghini, A. Hugger, M. Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, D. Sommer, J. Grünenpütt, K. Beilenhoff, H. Blanck, J.-T. Chen, O. Kordina, G. Meneghesso, E. Zanoni, “On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs”, Microelectronics Reliability, Volumes 88–90, 2018, Pages 397-401, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.07.122

E.Fabris, M. Meneghini, C. De Santi, Z. Hu, W. Li, K. Nomoto, X. Gao, D. Jena, H.G. Xing, G. Meneghesso, E. Zanoni, “Degradation of GaN-on-GaN vertical diodes submitted to high current stress”, Microelectronics Reliability, Volumes 88–90, 2018, Pages 568-571, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.06.041

A.Tajalli, E. Canato, A. Nardo, M. Meneghini, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso, “Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors”, Microelectronics Reliability, Volumes 88–90, 2018, Pages 572-576, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.06.037

M.Borga, M. Meneghini, S. Stoffels, M. Van Hove, M. Zhao, X. Li, S. Decoutere, E. Zanoni, G. Meneghesso, “Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs“, Microelectronics Reliability, Volumes 88–90, 2018, Pages 584-588, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.06.036

M.Ruzzarin, M. Meneghini, C. De Santi, M. Sun, T. Palacios, G. Meneghesso, E. Zanoni, “Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments”, Microelectronics Reliability, Volumes 88–90, 2018, Pages 620-626, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.06.044

M.Buffolo, M. Pietrobon, C. De Santi, F. Samparisi, M.L. Davenport, J.E. Bowers, G. Meneghesso, E. Zanoni, M. Meneghini, “Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits”, Microelectronics Reliability, Volumes 88–90, 2018, Pages 855-858, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.06.058

D.Monti, M. Meneghini, C. De Santi, A. Bojarska, P. Perlin, G. Meneghesso, E. Zanoni, “Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes”, Microelectronics Reliability, Volumes 88–90, 2018, Pages 864-867, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.06.055

N.Trivellin, D. Monti, C. De Santi, M. Buffolo, G. Meneghesso, E. Zanoni, M. Meneghini, “Current induced degradation study on state of the art DUV LEDs”, Microelectronics Reliability, Volumes 88–90, 2018, Pages 868-872, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.07.145

N.Renso, M. Buffolo, C. De Santi, M. Ronzani, G. Meneghesso, E. Zanoni, M. Meneghini, “Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress”, Microelectronics Reliability, Volumes 88–90, 2018, Pages 887-890, ISSN: 0026-2714, doi: 10.1016/j.microrel.2018.06.054

S.Stoffels, K. Geens, X. Li, D. Wellekens, S. You, M. Zhao, M. Borga, E. Zanoni, G. Meneghesso, M. Meneghini, N.E. Posthuma, M. Van Hove, and S. Decoutere, “Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal–oxide semiconductor compatible process”, MRS Communications, 1-8, 2018, ISSN: 2159-6859, doi: 10.1557/mrc.2018.192

A. Stockman, F. Masin, M. Meneghini, E. Zanoni, G. Meneghesso, B. Bakeroot, and P. Moens, “Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors,” in IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5365-5372, Dec. 2018, ISSN: 0018-9383, doi: 10.1109/TED.2018.2877262

C. De Santi, A. Caria, N. Renso, E. Dogmus, M. Zegaoui, F.Medjdoub, G. Meneghesso, E. Zanoni, and M. Meneghini, “Evidence of optically induced degradation in gallium nitride optoelectronic devices”, Applied Physics Express 11, 111002 (2018), ISSN: 18820778, doi: 10.7567/APEX.11.111002

2017

D. Bisi, I. Rossetto, M. Meneghini, G. Meneghesso, and E. Zanoni, “Reliability in III-nitride devices”, book chapter in a book entitled “Handbook of GaN Semiconductor Materials and Devices”, Editors: Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen, pp. 367-430, CRC Press (2017), ISBN: 9781498747141, doi: 10.1201/9781315152011

M. Ruzzarin, M. Meneghini, D. Bisi, M. Sun, T. Palacios, G. Meneghesso, and E. Zanoni, “Instability of Dynamic-RON and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors”, IEEE Transactions on Electron Devices 64, 3126-3131 (2017), doi: 10.1109/TED.2017.2716982, ISSN: 00189383

M.Buffolo, M. Meneghini, C. De Santi, M. L. Davenport, J. E. Bowers, G. Meneghesso, and E. Zanoni, “Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- mm DBR Laser Diodes,” IEEE Journal of Quantum Electronics, vol. 53, no. 4, pp. 8400108, Aug. 2017, doi: 10.1109/JQE.2017.2714582, ISSN: 00189197

Musolino, A. Tahraoui, L. Geelhaar, F. Sacconi, F. Panetta, C. De Santi, M. Meneghini, and E. Zanoni, “Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires”, Phys. Rev. Applied 7, 044014 (2017), doi: 10.1103/PhysRevApplied.7.044014, ISSN: 2331-7019

D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, and M. Kneissl, “Defect-Related Degradation of AlGaN-Based UV-B LEDs,” IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 200-205, Jan. 2017, doi: 10.1109/TED.2016.2631720, ISSN: 00189383

M.Meneghini, O. Hilt, J. Wuerfl, and G. Meneghesso, “Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate”, Energies 2017, 10(2), 153, doi: 10.3390/en10020153, ISSN: 1996-1073

M. Barbato, A. Barbato, M. Meneghini, G. Tavernaro, M. Rossetto, G. Meneghesso, “Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements”, Solar Energy Materials and Solar Cells 168 (2017) 51–61, doi: 10.1016/j.solmat.2017.04.007, ISSN: 09270248

A.Benvegnù, S. Laurent, O. Jardel, J.-L. Muraro, M. Meneghini, D. Barataud, G. Meneghesso, E. Zanoni, R. Quéré, “Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 5, pp. 2135-2141 (2017), doi: 10.1109/TED.2017.2682112, ISSN: 00189383

C.De Santi, M. Meneghini, D. Monti, J. Glaab, M. Guttmann, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni, “Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs”, Photonics Research vol. 5, No. 2, pp. A44-A51 (2017), doi: 10.1364/PRJ.5.000A44, ISSN: 23279125

M. Buffolo, M. Meneghini, A. Munaretto, C. De Santi, G. Meneghesso, E. Zanoni, “Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 17, NO. 1, pp. 191-196 (2017), doi: 10.1109/TDMR.2016.2642167, ISSN: 15304388

M.Meneghini, A. Barbato, I. Rossetto, A. Favaron, M. Silvestri, S. Lavanga, H. Sun, H. Brech, G. Meneghesso, E. Zanoni, “Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 3, pp. 1032-1037 (2017), doi: 10.1109/TED.2017.2654859, ISSN: 00189383

Hu, S. Stoffels, M. Zhao, A. N. Tallarico, I. Rossetto, M. Meneghini, X. Kang, B. Bakeroot, D. Marcon, B. Kaczer, S. Decoutere, G. Groeseneken, “Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests”, IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 3, pp. 371-374 (2017), doi: 10.1109/LED.2017.2661482, ISSN: 07413106

I.Rossetto, M. Meneghini, S. Pandey, M. Gajda, G. A. M. Hurkx, J. A. Croon, J. Šonský, G. Meneghesso, E. Zanoni, “Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 1, pp. 73-77 (2017), doi: 10.1109/TED.2016.2623774, ISSN: 00189383

H. Chan, D. Bisi,        X. Liu, R. Yeluri, M. Tahhan, S. Keller, S. P. DenBaars, M. Meneghini, and U. K. Mishra, “Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN”, Journal of Applied Physics 122, 174101 (2017), doi: 10.1063/1.5009757, ISSN: 00218979

N.Trivellin, M. Yushchenko, M. Buffolo, C. De Santi, M. Meneghini, G. Meneghesso, and E. Zanoni, “Laser-Based Lighting: Experimental Analysis and Perspectives”, Materials 2017, 10(10), 1166; doi: 10.3390/ma10101166, ISSN 1996-1944

Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, A. Bojarska, P. Perlin, “Long-term degradation of InGaN-based laser diodes: Role of defects”, Microelectronics Reliability 76–77 (2017) 584–587, doi: 10.1016/j.microrel.2017.06.043, ISSN: 00262714

A. Tajalli, M. Meneghini, I. Rossetto, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso, “Field and hot electron-induced degradation in GaN-based power MIS-HEMTs”, Microelectronics Reliability 76–77 (2017) 282–286, doi: 10.1016/j.microrel.2017.06.021, ISSN: 00262714

N. Renso, M. Meneghini, M. Buffolo, C. De Santi, G. Meneghesso, E. Zanoni, “Understanding the degradation processes of GaN based LEDs submitted to extremely high current density”, Microelectronics Reliability 76–77 (2017) 556–560, doi: 10.1016/j.microrel.2017.06.044, ISSN: 00262714

C.De Santi, M. Meneghini, A. Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, E. Zanoni, G. Meneghesso, “Degradation of InGaN-based MQW solar cells under 405 nm laser excitation”, Microelectronics Reliability 76–77 (2017) 575–578, doi: 10.1016/j.microrel.2017.06.072, ISSN: 00262714

I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni, “Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level”, Microelectronics Reliability 76–77 (2017) 298–303, doi: 10.1016/j.microrel.2017.06.061, ISSN: 00262714

M.Borga, M. Meneghini, I. Rossetto, S. Stoffels, N. Posthuma, M. Van Hove, D. Marcon, S. Decoutere, G. Meneghesso, and E. Zanoni, “Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs”, IEEE Transactions on Electron Devices 64, 3616-3621 (2017), doi: 10.1109/TED.2017.2726440, ISSN: 00189383

I.Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, and G. Meneghesso, “Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices 64, 3734-3739 (2017), doi: 10.1109/TED.2017.2728785, ISSN: 00189383

Acurio, F. Crupi, P. Magnone, L. Trojman, G. Meneghesso, F. Iucolano, “On Recoverable Behavior of PBTI in AlGaN/GaN MOS-HEMT”, Solid-State Electronics Volume 132, June 2017, Pages 49–56, doi: 10.1016/j.sse.2017.03.007, Scopus: 2-s2.0-85015611309

M. Silvestrini, M. Barbato, S. Costantini, F. Vercesi, L. Zanotti and G. Meneghesso, “Long-term Stresses on Linear Micromirrors for Pico Projector Application”, Microelectronics Reliability, Volumes 76–77, 2017, Pages 626-630, ISSN 0026-2714, https://doi.org/10.1016/j.microrel.2017.07.081

2016

G.Meneghesso, M. Meneghini, R. Silvestri, P. Vanmeerbeek, P. Moens, and E. Zanoni, “High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors”, Japanese Journal of Applied Physics 55, 01AD04 (2016), doi: 10.7567/JJAP.55.01AD04, ISSN: 00214922

M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti, G. Strasser, D. Pogany, E. Bahat-Treidel, F. Brunner, A. Knauer, J. Würfl, I. Rossetto, E. Zanoni, G. Meneghesso, S. Dalcanale, “Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure”, Microelectronics Reliability 58 (2016) 177–184, doi: 10.1016/j.microrel.2015.11.026, ISSN: 0026-2714

M. Meneghini, G. Meneghesso, and E. Zanoni, “Trapping and Degradation Mechanisms in GaN-Based HEMTs”, book chapter in “Gallium Nitride (GaN): Physics, Devices, and Technology”, Editor: Farid Medjdoub, October 16, 2015 by CRC Press, ISBN 9781482220032

G.Meneghesso, M. Meneghini, and E. Zanoni, “ESD Sensitivity of GaN-Based Electronic Devices”, book chapter in “Electrostatic Discharge Protection: Advances and Applications”, Editor: Juin J. Liou, September 25, 2015 by CRC Press, ISBN: 9781482255881

M. Barbato, A. Barbato, M. Meneghini, A. Cester, G. Mura, D. Tonini, A. Voltan. G. Cellere, and G. Meneghesso, “Reverse bias degradation of metal wrap through silicon solar cells”, Solar Energy Materials and Solar Cells 147, 288-294, (2016), doi: 10.1016/j.solmat.2015.12.029, ISSN: 0927-0248

D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, and E. Zanoni, “Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions”, IEEE Transactions on Device and Materials Reliability 16, 213 (2016), doi: 10.1109/TDMR.2016.2558473, ISSN: 15304388

I.Rossetto, M. Meneghini, O. Hilt, E. Bahat-Treidel, C. De Santi, S. Dalcanale, J. Wuerfl, E. Zanoni, and G. Meneghesso, “Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate”, IEEE Transactions on Electron Devices 63, 2334 (2016), doi: 10.1109/TED.2016.2553721, ISSN: 00189383

De Santi, M. Meneghini, M. Buffolo, G. Meneghesso, and E. Zanoni, “Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes”, IEEE Electron Device Letters 37, 611 (2016), doi: 10.1109/LED.2016.2543805, ISSN: 07413106

A.Benvegnù, D. Bisi, S. Laurent, M. Meneghini, G. Meneghesso, D. Barataud, E. Zanoni and R. Quere, “Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs”, International Journal of Microwave and Wireless Technologies, Volume 8, Special Issue 4-5, pp. 663-672 (June 2016), doi: 10.1017/S1759078716000398, ISSN: 17590787

M.Meneghini, I. Rossetto, D. Bisi, M. Ruzzarin, M. Van Hove, S. Stoffels, T.-L. Wu, D. Marcon, S. Decoutere, G. Meneghesso, and E. Zanoni, “Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs”, IEEE Electron Device Letters 37, 474-477 (2016), doi: 10.1109/LED.2016.2530693, ISSN: 07413106

M. Meneghini, I. Rossetto, V. Rizzato, S. Stoffels, M. Van Hove, N. Posthuma, T.-L. Wu, D. Marcon, S. Decoutere, G. Meneghesso, and E. Zanoni, “Gate Stability of GaN-Based HEMTs with P-Type Gate”, Electronics 2016, 5(2), 14, doi: 10.3390/electronics5020014, ISSN: 20799292

D.Bisi, S. H. Chan, X. Liu, R. Yeluri, S. Keller, M. Meneghini, G. Meneghesso, E. Zanoni and U. K. Mishra, “On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors”, Applied Physics Letters 108, 112104 (2016); doi: 10.1063/1.4944466, ISSN: 00036951

C.De Santi, M. Meneghini, M. La Grassa, B. Galler, R. Zeisel, M. Goano, S. Dominici, M. Mandurrino, F. Bertazzi, D. Robidas, G. Meneghesso, and E. Zanoni, “Role of defects in the thermal droop of InGaN-based light emitting diodes”, Journal of Applied Physics 119, 094501 (2016); doi: 10.1063/1.4942438, ISSN: 00218979

C.De Santi, M. Meneghini, D. Gachet, G. Mura, M. Vanzi, G. Meneghesso, and E. Zanoni, “Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes”, IEEE Transactions on Nanotechnology 15, 274-280 (2016), doi: 10.1109/TNANO.2016.2520833, ISSN: 1536125X

A.Benvegnù, S. Laurent, M. Meneghini, D. Barataud, G. Meneghesso, E. Zanoni, and R. Quere, “On-Wafer Single-Pulse Thermal Load–Pull RF Characterization of Trapping Phenomena in AlGaN/GaN HEMTs”, IEEE Transactions on Microwave Theory and Techniques, 64, 767-775 (2016), doi: 10.1109/TMTT.2016.2523991, ISSN: 00189480

Musolino, D. van Treeck, A. Tahraoui, L. Scarparo, C. De Santi, M. Meneghini, E. Zanoni, L. Geelhaar, and H. Riechert, “A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires”, Journal of Applied Physics 119, 044502 (2016); doi: 10.1063/1.4940949, ISSN: 00218979

G. Meneghesso, M. Meneghini, I. Rossetto, D. Bisi, S. Stoffels, M. Van Hove, S. Decoutere, and E. Zanoni, “Reliability and parasitic issues in GaN-based power HEMTs: a review”, Semicond. Sci. Technol. 31 (2016) 093004, doi: 10.1088/0268-1242/31/9/093004, ISSN: 0268-1242

A.Chini, G. Meneghesso, M. Meneghini, F. Fantini, G. Verzellesi, A. Patti, and F. Iucolano, “Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers”, IEEE TRANSACTIONS ON ELECTRON DEVICES 63, 3473 (2016), doi: 10.1109/TED.2016.2593791, ISSN: 0018-9383

Salavei, D. Menossi, F. Piccinelli, A. Kumar, G. Mariotto, M. Barbato, M. Meneghini, G. Meneghesso, S. Di Mare, E. Artegiani, A. Romeo, “Comparison of high efficiency flexible CdTe solar cells on different substrates at low temperature deposition”, Solar Energy 139 (2016) 13–18, doi: 10.1016/j.solener.2016.09.004, ISSN: 0038092X

M.La Grassa, M. Meneghini, C. De Santi, E. Zanoni, G. Meneghesso, “Degradation of InGaN-based LEDs related to charge diffusion and build-up”, Microelectronics Reliability 64 (2016) 614–616, doi: 10.1016/j.microrel.2016.07.131, ISSN: 00262714

M. Buffolo, M. Meneghini, C. De Santi, H. Felber, N. Renso, G. Meneghesso, E. Zanoni, “Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs”, Microelectronics Reliability 64 (2016) 610–613, doi: 10.1016/j.microrel.2016.07.103, ISSN: 00262714

A. Benvegnù, S. Laurent, M. Meneghini, R. Quéré, J.-L. Roux, E. Zanoni, and D. Barataud, “Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs”, Microelectronics Reliability 64 (2016) 535–540, doi: 10.1016/j.microrel.2016.07.122, ISSN: 00262714

I.Rossetto, M. Meneghini, V. Rizzato, M. Ruzzarin, A. Favaron, S. Stoffels, M. Van Hove, N. Posthuma, T. –L. Wu, D. Marcon, S. Decoutere, G. Meneghesso, E. Zanoni, “Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis”, Microelectronics Reliability 64 (2016) 547–551, doi: 10.1016/j.microrel.2016.07.127, ISSN: 00262714

C.De Santi, M. Meneghini, G. Meneghesso, E. Zanoni, “Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes”, Microelectronics Reliability 64 (2016) 623–626, doi: 10.1016/j.microrel.2016.07.118, ISSN: 00262714

M. Ruzzarin, M. Meneghini, I. Rossetto, M. Van Hove, S. Stoffels, T.- L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress”, IEEE Electron Device Letters 37, 1415 (2016), doi: 10.1109/LED.2016.2609098, ISSN: 07413106

F.Iucolano, A. Parisi, S. Reina, G. Meneghesso, A. Chini, “Study of threshold voltage instability in E-mode GaN MOS-HEMTs”, Physica Status Solidi (c), Volume 13, Issue 5-6, pages 321–324, May 2016, DOI: 10.1002/pssc.201510191, Scopus: 2-s2.0-84958190860

Mulloni, L. Lorenzelli, B. Margesin, M. Barbato, G. Meneghesso, “Temperature as an accelerating factor for lifetime estimation of RF-MEMS switches”, Microelectronic Engineering (2016), pp. 63-67, doi: 10.1016/j.mee.2016.03.023, scopus: 2-s2.0-84961843570

Barbato, M., Cester, A., Mulloni, V., Margesin, B., Meneghesso, G., “Preconditioning Procedure for the Better Estimation of the Long Term Lifetime in Microelectromechanical Switches”, IEEE Transactions on Electron Devices, vol. 63, no. 3, pp: 1274-1280, 2016. doi: 10.1109/TED.2016.2521266,  Scopus: 2-s2.0-84969335415 (ENS, REdundancy.)

Crupi, P. Magnone, S. Strangio, F. Iucolano, G. Meneghesso, “Low Frequency Noise and Gate Bias Instability in Normally-Off AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices, vol. 65, no. 5, pp: 2219-2222, 2016, doi: 10.1109/TED.2016.2544798, scopus: 2-s2.0-84962490875 (E2CoGaN.)

Lago, N., Cester, A., Wrachien, N., Natali, M., Quiroga, S.D., Bonetti, S., Barbato, M., Rizzo, A., Benvenuti, E., Benfenati, V., Muccini, M., Toffanin, S., Meneghesso, G. “A Physical-Based Equivalent Circuit Model for an Organic/Electrolyte Interface”, (2016) Organic Electronics: physics, materials, applications, 35, pp. 176-185. scopus: 2-s2.0-84977659725, DOI: 10.1016/j.orgel.2016.05.018

Mulloni, V; Barbato, M; Meneghesso, G. “Long-term lifetime prediction for RF-MEMS switches”,  Journal of Micromechanics and Microengineering (JMM), Vol. 26, no. 7, pp. 074004  scopus: 2-s2.0-84979556493, DOI: 10.1088/0960-1317/26/7/074004

Barbato, M., Cester, A., Meneghesso, G. “Viscoelasticity Recovery Mechanism in Radio Frequency Microelectromechanical Switches”, (2016) IEEE Transactions on Electron Devices, 63 (9), art. no. 7516604, pp. 3620-3626. scopus: =2-s2.0-84978865165, DOI: 10.1109/TED.2016.2586600

Lago, N., Cester, A., Wrachien, N., Benvenuti, E., Quiroga, S.D., Natali, M., Toffanin, S., Muccini, M., Meneghesso, G., “Investigation of Mobility Transient on Organic Transistor by Means of DLTS Technique”, (2016) IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4432 – 4439, 2016.  scopus: 2-s2.0-84990842147, DOI: 10.1109/TED.2016.2611142

Salavei, D. Menossi, F. Piccinelli, A. Kumar, G. Mariotto, M. Barbato, M. Meneghini, G. Meneghesso, S. Di Mare, E. Artegiani, A. Romeo, “Comparison of high efficiency flexible CdTe solar cells on different substrates at low temperature deposition”, Solar Energy, 139 (2016) pp. 13–18, doi: http://dx.doi.org/10.1016/j.solener.2016.09.004

2015

L. Wu. , D. Marcon, N. Ronchi, B. Bakeroot, S. You, S. Stoffels, M. Van Hove, D. Bisi, M. Meneghini, G. Groeseneken, S. Decoutere, “Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics”, Solid State Electronics 103, 127 (2015), doi:10.1016/j.sse.2014.08.006, ISSN: 0038-1101

M. Meneghini, P. Vanmeerbeek, R. Silvestri, S. Dalcanale, A. Banerjee, D. Bisi, E. Zanoni, G. Meneghesso, P. Moens, “Temperature-Dependent Dynamic Ron in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage,” IEEE Transactions on Electron Devices, vol.62, no.3, pp.782-787, March 2015 doi: 10.1109/TED.2014.2386391, ISSN: 0018-9383

M. Meneghini, I. Rossetto, F. Hurkx, J. Sonsky, J. A. Croon, G. Meneghesso, and E. Zanoni, “Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress”, IEEE Transactions on Electron Devices, vol 62, no. 8, pp. 2549-2554, August 2015, doi: 10.1109/TED.2015.2446032, ISSN: 0018-9383

Rossetto, M. Meneghini, M. Barbato, F. Rampazzo, D. Marcon, G. Meneghesso, and E. Zanoni, “Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs”, IEEE Transactions on Electron Devices, vol. 62, no. 9, pp. 2830-2836, September 2015, doi: 10.1109/TED.2015.2463713, ISSN: 00189383

Medjdoub, M. Zegaoui, A. Linge, B. Grimbert, R. Silvestri, M. Meneghini, G. Meneghesso, and E. Zanoni, “High PAE high reliability AlN/GaN double heterostructure”, Solid-State Electronics 113 (2015) 49–53, doi: 10.1016/j.sse.2015.05.009, ISSN: 0381101

Rossetto, F. Rampazzo, S. Gerardin, M. Meneghini, M. Bagatin, A. Zanandrea, C. Dua, M.-A. di Forte-Poisson, R. Aubry, M. Oualli, S.L. Delage, A. Paccagnella, G. Meneghesso, E. Zanoni, “Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs”, Solid-State Electronics 113 (2015) 15–21, doi: 10.1016/j.sse.2015.05.013, ISSN: 00381101

A. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. Van Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels, N. Ronchi, G. Meneghesso, “Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation”, Solid-State Electronics 113 (2015) 9–14, doi: 10.1016/j.sse.2015.05.012, ISSN: 00381101

La Grassa, M. Meneghini, C. De Santi, M. Mandurrino, M. Goano, F. Bertazzi, R. Zeisel, B. Galler, G. Meneghesso, and E. Zanoni, “Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects”, Microelectronics Reliability 55 (2015) 1775–1778, doi: 10.1016/j.microrel.2015.06.103, ISSN: 00262714

De Santi, M. Dal Lago, M. Buffolo, D. Monti, M. Meneghini, G. Meneghesso, and E. Zanoni, “Failure causes and mechanisms of retrofit LED lamps”, Microelectronics Reliability 55 (2015) 1765–1769, doi: 10.1016/j.microrel.2015.06.080, ISSN: 00262714

Buffolo, C. De Santi, M. Meneghini, D. Rigon, G. Meneghesso, and E. Zanoni, “Long-term degradation mechanisms of mid-power LEDs for lighting applications”, Microelectronics Reliability 55 (2015) 1754–1758, doi: 10.1016/j.microrel.2015.06.098, ISSN: 00262714

Rossetto, M. Meneghini, D. Bisi, A. Barbato, M. Van Hove, D. Marcon, T.-L. Wu, S. Decoutere, G. Meneghesso, E. Zanoni, “Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs”, Microelectronics Reliability 55 (2015) 1692–1696, doi: 10.1016/j.microrel.2015.06.130, ISSN: 00262714

Bisi, A. Stocco, I. Rossetto, M. Meneghini, F. Rampazzo, A. Chini, F. Soci, A. Pantellini, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di Forte-Poisson, D. De Salvador, M. Bazzan, G. Meneghesso, and E. Zanoni, “Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs”, Microelectronics Reliability 55 (2015) 1662–1666, doi: 10.1016/j.microrel.2015.06.038, ISSN: 00262714

Bisi, M. Meneghini, M. Van Hove, D. Marcon, S. Stoffels, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate”, Phys. Status Solidi A 212, No. 5, 1122–1129 (2015), doi: 10.1002/pssa.201431744, ISSN: 18626300

Marioli, M. Meneghini, F. Rossi, G. Salviati, C. de Santi, G. Mura, G. Meneghesso, and E. Zanoni, “Degradation mechanisms and lifetime of state-of-the-art green laser diodes”, Phys. Status Solidi A 212, No. 5, 974–979 (2015), doi: 10.1002/pssa.201431714, ISSN: 18626300

Mandurrino, G. Verzellesi, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, M. Meneghini, G. Meneghesso, and E. Zanoni, “Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes”, Phys. Status Solidi A 212, No. 5, 947–953 (2015), doi: 10.1002/pssa.201431743, ISSN: 18626300

Mandurrino, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, G. Verzellesi, M. Meneghini, G. Meneghesso, and E. Zanoni, “Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes”, J Comput Electron (2015) 14, 444–455, doi: 10.1007/s10825-015-0675-3, ISSN: 5698025

Meneghini, D. Zhu, C. J. Humphreys, M. Berti, A. Gasparotto, T. Cesca, A. Vinattieri, F. Bogani, G. Meneghesso, and E. Zanoni, “Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes”, AIP ADVANCES 5, 107121 (2015), doi: 10.1063/1.4934491, E-ISSN: 2158-3226

D.Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design”, IEEE Electron Device Letters 36 (10), 1011 (2015), doi: 10.1109/LED.2015.2474116, ISSN: 0741-3106

Wrachien, A. Cester, N. Lago, A. Rizzo, R. D’Alpaos, A. Stefani, G. Turatti, M. Muccini, G. Meneghesso, Reliability study of organic complementary logic inverters using constant voltage stress, Solid-State Electronics, Volume 113, November 2015, Pages 151-156, ISSN 0038-1101, http://dx.doi.org/10.1016/j.sse.2015.05.028. Scopus: 2-s2.0-84937252684

Wrachien, N. Lago, A. Rizzo, R. D’Alpaos, A. Stefani, G. Turatti, M. Muccini, G. Meneghesso, A. Cester, “Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics”, Microelectronics Reliability, vol. 55, no. 9-10, pp. 1790-1794, ISSN 0026-2714, doi: 10.1016/j.microrel.2015.06.073, Scopus: 2-s2.0-84943451804

Barbato, M. ; Meneghesso, G.  “A Novel Technique to Alleviate the Stiction Phenomenon in Radio Frequency Micro Electro Mechanical Switches”, IEEE Electron Device Letters, vol. 36 no, 2, pp. 177-179, 2015.  ISSN : 0741-3106, DOI: 10.1109/LED.2014.2376594, Scopus: 2-s2.0-84921846030

Barbato, A. Cester, V. Mulloni, B. Margesin and G. Meneghesso, “Transient Evolution of Mechanical and Electrical Effects in Microelectromechanical Switches Subjected to Long Term Stresses”, IEEE Transactions on Electron Devices, vol 62, no. 11, pp. 3825 – 3831 , August 2015, doi: 10.1109/TED.2015.2479578, ISSN: 0018-9383, Scopus: 2-s2.0-84946494141

Lago, A. Cester, N. Wrachien, I. Tomasino, S. Toffanin, S. D. Quiroga, E. Benvenuti, M. Natali, M. Muccini, and G. Meneghesso, “On the Pulsed and Transient Characterization of Organic Field-Effect Transistors”, IEEE Electron Device Letters, vol. 36, no. 12, pp. 1359-1362, doi: 10.1109/LED.2015.2496336, Scopus: 2-s2.0-84959501033

2014

M. Meneghini, D. Bisi, D. Marcon, S. Stoffels, M. Van Hove, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications”, Power Electronics, IEEE Transactions on , vol.29, no.5, pp.2199-2207, May 2014 doi: 10.1109/TPEL.2013.2271977, ISSN: 0885-8993

M. Meneghini, M. Dal Lago, N. Trivellin, G. Meneghesso, and E. Zanoni, “Degradation Mechanisms of High Power LEDs for Lighting Applications: an overview,” IEEE Transactions on Industry Applications 50, 78-85 (2014), doi: 10.1109/TIA.2013.2268049, ISSN: 00939994

M. Meneghini, M. la Grassa, S. Vaccari, B. Galler, R. Zeisel, P. Drechsel, B. Hahn, G. Meneghesso, and E. Zanoni, “Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes”, Applied Physics Letters 104, 113505 (2014); doi: 10.1063/1.4868719, ISSN: 0003-6951

G.Verzellesi, L. Morassi, G. Meneghesso, M. Meneghini, E. Zanoni, G. Pozzovivo, S. Lavanga, T. Detzel, O. Haberlen, G. Curatola, “Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs,” Electron Device Letters, IEEE , vol.35, no.4, pp.443,445, April 2014 doi: 10.1109/LED.2014.2304680, ISSN: 0741-3106

M. Meneghini, D. Bisi, D. Marcon, S. Stoffels, M. Van Hove, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons”, Applied Physics Letters 104, 143505 (2014); doi: 10.1063/1.4869680, ISSN: 0003-6951

M. Meneghini, S. Vaccari, M. Dal Lago, S. Marconi, M. Barbato, N. Trivellin, A. Griffoni, A. Alfier, G. Verzellesi, G. Meneghesso, E. Zanoni, “ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements”, Microelectronics Reliability 54 (2014) 1143–1149, DOI: 10.1016/j.microrel.2014.02.009, ISSN: 00262714

Venturi, A. Castaldini, A. Cavallini, M. Meneghini, E. Zanoni, D. Zhu, and C. Humphreys, “Dislocation-related trap levels in nitride-based light emitting diodes”, Applied Physics Letters 104, 211102 (2014); doi: 10.1063/1.4879644, ISSN: 0003-6951

M. Meneghini, G. Cibin, M. Bertin, G. A. M. Hurkx, P. Ivo, J. Sonsky, J. A. Croon, G. Meneghesso, and E. Zanoni, “OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown”, IEEE Transactions on Electron Devices 61, 1987 (2014), doi: 10.1109/TED.2014.2318671, ISSN: 0018-9383

Calciati, M. Goano, F. Bertazzi, M. Vallone, X. Zhou, G. Ghione, M. Meneghini, G. Meneghesso, E. Zanoni, E. Bellotti, G. Verzellesi, D. Zhu, and C. Humphreys, “Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues”, AIP Advances 4, 067118 (2014); doi: 10.1063/1.4882176, E-ISSN: 2158-3226

C. De Santi, M. Meneghini, H. Ishida, T. Ueda, G. Meneghesso, E. Zanoni, “Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors”, Applied Physics Letters, 105, 073507 (2014), DOI, ISSN: 0003-6951, E-ISSN: 1077-3118

G. Meneghesso, M. Meneghini, and E. Zanoni, “Breakdown mechanisms in AlGaN/GaN HEMTs: An overview”, Japanese Journal of Applied Physics 53, 100211 (2014), Online ISSN: 1347-4065, Print ISSN: 0021-4922

D. Bisi, M. Meneghini F. A. Marino, D. Marcon, S. Stoffels, M. Van Hove, S. Decoutere, G. Meneghesso, and E. Zanoni, “Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs,”Electron Device Letters, IEEE , 35,10,1004, (2014) doi: 10.1109/LED.2014.2344439, ISSN: 07413106

C. De Santi, M. Meneghini, N. Trivellin, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, and E. Zanoni, “Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation”, Applied Physics Letters 105, 213506 (2014); doi: 10.1063/1.4902870, ISSN: 0003-6951

M. Barbato, M. Meneghini, A. Cester, G. Mura, E. Zanoni, and G. Meneghesso, “Influence of Shunt Resistance on the Performance of an Illuminated String of Solar Cells: Theory, Simulation, and Experimental Analysis”, IEEE Transactions on Device and Materials Reliability, 14, 942 (2014) doi: 10.1109/TDMR.2014.2347138, ISSN: 1530-4388

M. Meneghini, I. Rossetto, D. Bisi, A. Stocco, A. Chini, A. Pantellini, C. Lanzieri, A. Nanni, G. Meneghesso, and E. Zanoni, “Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements”, IEEE Transactions on Electron Devices 61, 4070 (2014) doi: 10.1109/TED.2014.2364855, ISSN: 0018-9383

A. Stocco, S. Gerardin, D. Bisi, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso, J. Grünenpütt, B. Lambert, H. Blanck, E. Zanoni, “Proton induced trapping effect on space compatible GaN HEMTs”, Microelectronics Reliability 54, 2213 (2014), doi:10.1016/j.microrel.2014.07.120, ISSN: 0026-2714

A. Stocco, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso, J. Grünenpütt, B. Lambert, H. Blanck, E. Zanoni, “Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications”, Microelectronics Reliability 54, 2237 (2014), doi:10.1016/j.microrel.2014.07.075, ISSN: 0026-2714

A. Chini, F. Soci, G. Meneghesso, M. Meneghini, and E. Zanoni, “Traps localization and analysis in GaN HEMTs”, Microelectronics Reliability 54, 2222 (2014), doi:10.1016/j.microrel.2014.07.085, ISSN: 0026-2714

C. De Santi, M. Meneghini, M. Marioli, M. Buffolo, N. Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U.T. Schwarz, G. Meneghesso, E. Zanoni, “Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage”, Microelectronics Reliability 54, 2147 (2014), doi:10.1016/j.microrel.2014.07.073, ISSN: 0026-2714

I Rossetto, F. Rampazzo, M. Meneghini, M. Silvestri, C. Dua, P. Gamarra, R. Aubry, M.-A. di Forte-Poisson, O. Patard, S.L. Delage, G. Meneghesso, E. Zanoni, “Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs”, Microelectronics Reliability 54, 2248 (2014), doi:10.1016/j.microrel.2014.07.092, ISSN: 0026-2714

M. Dal Lago, M. Meneghini, C. De Santi, M. Barbato, N. Trivellin, G. Meneghesso, E. Zanoni, “ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms”, Microelectronics Reliability 54, 2138 (2014), doi:10.1016/j.microrel.2014.07.122, ISSN: 0026-2714

Giaffreda, D.; Magnone, P.; Meneghini, M.; Barbato, M.; Meneghesso, G.; Zanoni, E.; Sangiorgi, E.; Fiegna, C., “Local Shunting in Multicrystalline Silicon Solar Cells: Distributed Electrical Simulations and Experiments“, IEEE Journal of Photovoltaics, Vol. 4: no. 1, pp. 40-47, 2014, doi: 10.1109/JPHOTOV.2013.2280838,

Barbato, M. ; Giliberto, V. ; Cester, A. ; Meneghesso, G., “A combined mechanical and electrical characterization procedure for investigating the dynamic behavior of RF-MEMS switches“, IEEE Transactions on Device and Materials Reliability, Vol. 14, no. 1, pp. 13-20, 2014, doi.: 10.1109/TDMR.2013.2282636

Abbate, M. Alderighi, S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, V. De Luca, S. Fiore, S. Gerardin, E. Ghisolfi, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, G. Meneghesso, A. Paccagnella, F. Rampazzo, M. Riva, A. Sanseverino, R. Silvestri, G. Spiazzi, F. Velardi, E. Zanoni, “Developments on DC/DC converters for the LHC experiment upgrades”, Journal of Instrumentation, Vol. 9, pp. C02017, 2014. doi:10.1088/1748-0221/9/02/C02017

Kuzmik, M. Jurkovi, D. Gregušová, M. Tapajna, F. Brunner, M. Cho, G. Meneghesso, and J. Würfl, “Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown” Journal of Applied Physics 115, 164504 (2014); doi: 10.1063/1.4873301

M. Calciati, M. Goano, F. Bertazzi, M. Vallone, X. Zhou, G. Ghione, M. Meneghini, G. Meneghesso, E. Zanoni, E. Bellotti, G. Verzellesi, D. Zhu, and C. Humphreys, “Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: pitfalls and open issues”, AIP Advances Vol. 4, pp. 067118 (2014); doi: 10.1063/1.4882176 E-ISSN: 2158-3226

Wrachien, A. Cester, N. Lago, G. Meneghesso, R. D’Alpaos, A. Stefani, G. Turatti, M. Muccini, “Stress-Induced Degradation of p- and n-type Organic Thin-Film-Transistors in the ON and OFF States”, Microelectronics Reliability, vol. 54, no. 9-11, pp. 1638-1642, 2014. ISSN 0026-2714, doi: http://dx.doi.org/10.1016/j.microrel.2014.07.065 (NO ACKN.)

Chini, Alessandro; Meneghesso, Gaudenzio; Pantellini, Alessio; Lanzieri, Claudio; Zanoni, Enrico. 2014. INVITED “Reliability Investigation of GaN HEMTs for MMICs Applications.” Micromachines Vol. 5, no. 3: pp. 570-582. doi:10.3390/mi5030570, ISSN ISSN 2072-666X,

F.A. Marino, A. Stocco, M. Barbato, E. Zanoni, G. Meneghesso, “Double Control Gate Field Effect Transistor for Area Efficient and Cost Effective Applications”, IEEE Electron Device Letters, vol. 35, no. 11, pp. 1073-1075, 2014. doi: 10.1109/LED.2014.2354112

2013

M. Meneghini, M. Bertin, A. Stocco, G. dal Santo, D. Marcon, P. E. Malinowski, A. Chini, G. Meneghesso, and E. Zanoni, “Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface”, Appl. Phys. Lett. 102, 163501 (2013), ISSN: 00036951,

D.Marcon, G. Meneghesso, T.L. Wu, S. Stoffels, M. Meneghini, E. Zanoni, and S. Decoutere, “Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices 60 (10), pp. 3132-3141, 2013, ISSN:           0018-9383, doi: 10.1109/TED.2013.2273216

Meneghini, A. Zanandrea, F. Rampazzo, A. Stocco, M. Bertin, G. Cibin, D. Pogany, E. Zanoni, and G. Meneghesso, “Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions”, Japanese Journal of Applied Physics 52 (2013) 08JN17, ISSN: 00214922

M.Meneghini, S. Vaccari, A. Garbujo, N. Trivellin, D. Zhu, C. J. Humphreys, M. Calciati, M. Goano, F. Bertazzi, G. Ghione, E. Bellotti, G. Meneghesso, and E. Zanoni, Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells”, Jpn. J. Appl. Phys. 52 (2013) 08JG09, ISSN: 00214922, doi: 10.7567/JJAP.52.08JG09

G.Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies”, Journal of Applied Physics 114 (7) , art. no. 071101, 2013, ISSN: 00218979, DOI: 10.1063/1.4816434

I.Rossetto, M. Meneghini, G. Meneghesso, and E. Zanoni, “Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics”, Microelectronics Reliability 53 (2013) 1456-1460 ISSN: 00262714, DOI: 10.1016/j.microrel.2013.07.115

M.Meneghini, G. Meneghesso, and E. Zanoni, “Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs”, book chapter in III-Nitride Based Light Emitting Diodes and Applications, Springer, Dordrecht Heidelberg New York London. Editors: Tae-Yeon Seong, Jung Han, Hiroshi Amano, Hadis Morkoc. In book series “Topics in Applied Physics”, Volume 126, 2013, pp 197-229, 2013, ISSN: 03034216, ISBN: 978-940075862-9, DOI: 10.1007/978-94-007-5863-6_8

A. Chini, F. Soci, M. Meneghini, G. Meneghesso, and E. Zanoni, “Deep Levels Characterization in GaN HEMTs – Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy”, IEEE Transactions on Electron Devices 60 (10), pp. 3176-3182, 2013, ISSN:           0018-9383, doi: 10.1109/TED.2013.2278290

D.Bisi, M. Meneghini, C. de Santi, A. Chini, M. Damman P. Brueckner, M. Mikulla, G. Meneghesso, and E. Zanoni, “Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements”, IEEE Transactions on Electron Devices 60 (10), pp. 3166-3175, 2013, ISSN:0018-9383, doi: 10.1109/TED.2013.2279021

Giaffreda, P. Magnone, M. Meneghini, M. Barbato, G. Meneghesso, E. Zanoni, E. Sangiorgi, and C. Fiegna, “Local Shunting in Multicrystalline Silicon Solar Cells: Distributed Electrical Simulations and Experiments”, in Photovoltaics, IEEE Journal of , vol.4, no.1, pp.40-47, Jan. 2014 doi: 10.1109/JPHOTOV.2013.2280838, ISSN: 2156-3381

M. Meneghini, G. Meneghesso, E. Zanoni, M. Dal Lago, and N. Trivellin, “Reliability oriented design of LED-based light sources”, LED Professional Review 39, pp. 52-56, Sept-Oct. 2013, ISSN: 1997-890X

I. Rossetto, F. Rampazzo, R. Silvestri, A. Zanandrea, C. Dua, S. Delage, M. Oualli, M. Meneghini, E. Zanoni, G. Meneghesso, “Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate”, Microelectronics Reliability 53 (2013) 1476–1480, doi: 10.1016/j.microrel.2013.07.048 ISSN: 0026-2714

S.Vaccari, M. Meneghini, A. Griffoni, D. Barbisan, M. Barbato, S. Carraro, M. La Grassa, G. Meneghesso, E. Zanoni, “ESD characterization of multi-chip RGB LEDs”, Microelectronics Reliability 53 (2013) 1510-1513, doi: 10.1016/j.microrel.2013.07.049 ISSN: 0026-2714

M. Dal Lago, M. Meneghini, N. Trivellin, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni, “”Hot-plugging” of LED modules: Electrical characterization and device degradation”, Microelectronics Reliability 53 (2013) 1524-1528 doi: 10.1016/j.microrel.2013.07.054 ISSN: 0026-2714

C.De Santi, M. Meneghini, S. Carraro, S. Vaccari, N. Trivellin, S. Marconi, M. Marioli, G. Meneghesso, E. Zanoni, “Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes”, Microelectronics Reliability 53 (2013) 1534-1537, doi: 10.1016/j.microrel.2013.07.053 ISSN: 0026-2714

M.Compagnin, M. Meneghini, M. Barbato, V. Giliberto, A. Cester, M. Vanzi, G. Mura, E. Zanoni, G. Meneghesso, “Thermal and electrical investigation of the reverse bias degradation of silicon solar cells”, Microelectronics Reliability 53 (2013) 1809-1813, doi: 10.1016/j.microrel.2013.07.013 ISSN: 0026-2714

M.Meneghesso, M. Meneghini, A. Stocco, D. Bisi, C. de Santi, I. Rossetto, A. Zanandrea, F. Rampazzo, E. Zanoni, Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress”, Microelectronic Engineering 109, 257–261, 2013, ISSN: 01679317,

M. Meneghini, S. Carraro, G. Meneghesso, N. Trivellin, G. Mura, F. Rossi, G. Salviati, K. Holc, T. Weig, L. Schade, M. A. Karunakaran, J. Wagner, U. T. Schwarz, and E. Zanoni, “Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence” Applied Physics Letters 103, 233506 (2013); doi: 10.1063/1.4834697

G. Meneghesso, M. Meneghini, D. Bisi, R. Silvestri, A. Zanandrea, O. Hilt, E. Bahat-Treidel, F. Brunner, A. Knauer, J. Wuerfl, and E. Zanoni, “GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues”, ECS Trans. 58, (4), 187-198 (2013), doi: 10.1149/05804.0187ecst, ISSN 1938-6737

N. Wrachien, A. Cester, D. Bari, R. Capelli, R. D’Alpaos, M. Muccini, A. Stefani, G. Turatti, G. Meneghesso “Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric“, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1798-1803, 2013. ISSN 0026-2714, http://dx.doi.org/10.1016/j.microrel.2013.07.085

D. Bari, N. Wrachien, R. Tagliaferro, T.M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, A. Cester,  “Comparison between positive and negative constant current stress on dye-sensitized solar cells”, Microelectronics Reliability, I vol. 53, no. 9-11, pp. 1804-1808, 2013. ISSN 0026-2714, doi 10.1016/j.microrel.2013.07.093,

C. Fleury, R. Zhytnytska, S. Bychikhin, M. Cappriotti, O. Hilt, D. Visalli, G. Meneghesso, E. Zanoni, J. Würfl, J. Derluyn, G. Strasser, D. Pogany,  “Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications“, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1444-1449, 2013. ISSN 0026-2714, doi: 10.1016/j.microrel.2013.07.117

A. Chini, F. Soci, F. Fantini, A. Nanni, A. Pantellini, C. Lanzieri, G. Meneghesso, E. Zanoni “Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1461-1465, 2013. ISSN 0026-2714, doi: 10.1016/j.microrel.2013.07.033,

Ghione, K.J. Chen, T. Egawa, G. Meneghesso,T. Palacios, R. Quay, “Guest Editorial Special Issue on GaN Electronic Devices” IEEE Transactions on Electron Devices, Vol. 60, no. 10, pp. 2975-2981,, 2013. doi.: 10.1109/TED.2013.2278653

2012

M. Meneghini,M. Dal Lago, N. Trivellin, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni, “Chip and package-related degradation of high power white LEDs”, Microelectronics Reliability 52, 804–812 (2012)

M. Meneghini, M. Dal Lago, L. Rodighiero, N. Trivellin, E. Zanoni, G. Meneghesso, “Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress”, Microelectronics Reliability 52, 1621–1626, 2012

M. Meneghini, C. de Santi, T. Ueda, T. Tanaka, D. Ueda, E. Zanoni, and G. Meneghesso, “Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate”, IEEE Electron Device Letters 33 (3), 375, 2012

Orita, M. Meneghini, H. Ohno, N. Trivellin, N. Ikedo, S. Takigawa, M. Yuri, T. Tanaka, E. Zanoni, and G. Meneghesso, “Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes”, IEEE Journal of Quantum Electronics, vol 48, no. 9, pp. 1169-1176, 2012 (doi 10.1109/JQE.2012.2203795)

M. Meneghini, S. Vaccari, N.Trivellin, D. Zhu, C.Humphreys, R. Butendheich, C. Leirer, B. Hahn, G. Meneghesso, and E. Zanoni, “Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs”, IEEE TRANSACTIONS ON ELECTRON DEVICES 59, 1416, 2012, doi 10.1109/TED.2012.2186970

Saguatti, L. Bidinelli, G. Verzellesi, M. Meneghini, G. Meneghesso, E. Zanoni, R. Butendeich, B. Hahn, “Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes, IEEE TRANSACTIONS ON ELECTRON DEVICES 59, 1402, 2012, doi 10.1109/TED.2012.2186579

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias”, Appl. Phys. Lett. 100, 033505, 2012

M.Meneghini, A. Stocco, R. Silvestri, G. Meneghesso, and E. Zanoni, “Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons”, Appl. Phys. Lett. 100, 233508, 2012

M. Dal Lago, M. Meneghini, N. Trivellin, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni, “Phosphors for LED-based light sources: Thermal properties and reliability issues”, Microelectronics Reliability 52, 2164–2167, 2012,

Marko, M. Meneghini, S. Bychikhin, D. Marcon, G. Meneghesso, E. Zanoni, D. Pogany, “IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors”, Microelectronics Reliability 52, 2194–2199, 2012,

I. Rossetto, M. Meneghini, T. Tomasi, D. Yufeng, G. Meneghesso, E. Zanoni, “Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits”, Microelectronics Reliability 52, 2093–2097, 2012,

A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo, J. Wuerfl, G. Meneghesso, “Single- and double-heterostructure GaN-HEMTs devices for power switching applications”, Microelectronics Reliability 52, 2426–2430, 2012,

Cullen, D. Smith, A. Passaseo, V. Tasco, A. Stocco, M. Meneghini, G. Meneghesso, E. Zanoni “Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices”, IEEE Transactions on Device and Materials Reliability 13 (1) , art. no. 6317160 , pp. 126-135, 2013, ISSN: 15304388, doi: 10.1109/TDMR.2012.2221464

M. Meneghini, M. Dal Lago, N. Trivellin, G. Meneghesso, E. Zanoni, “Thermally-activated degradation of remote phosphors for application in LED lighting”, IEEE Transactions on Device and Materials Reliability 13 (1) , art. no. 6307834 , pp. 316-318, 2013, ISSN: 15304388, doi: 10.1109/TDMR.2012.2214780

Bari, A. Cester, N. Wrachien, L. Ciammaruchi, T. M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, “Reliability Study of Ruthenium-Based Dye-Sensitized Solar Cells (DSCs)”, IEEE Journal of Photovoltaics, Vol.. 2, No. 1, pp. 27 – 34, January 2012. doi: 10.1109/JPHOTOV.2011.2180702

A. Persano, A. Tazzoli, A. Cola, P. Siciliano, G. Meneghesso, and F. Quaranta, “Reliability Enhancement by Suitable Actuation Waveforms for Capacitive RF MEMS Switches in III-V Technology”, accepted to be published on IEEE Journal of MicroElectroMechanical Systems, vol. 21, No. 2, pp. 414-419, 2012,  doi. 10.1109/JMEMS.2011.2175366

Marko, A. Alexewicz, O. Hilt, G. Meneghesso, E. Zanoni, J. Wuerfl, G. Strasser, and D. Pogany, “Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors”, Applied Physics Letters vol. 100, pp. 143507-1,2,3, 2012. doi:10.1063/1.3701164

Chini, V. Di Lecce, F. Fantini, G. Meneghesso, E. Zanoni, “Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation”, IEEE Transaction on Electron Devices, Vol. 59, No. 5, pp. 1385-1392 2012,doi:10.1109/TED.2012.2188636

De Pasquale, M. Barbato, V. Giliberto, G. Meneghesso, A. Somà, “Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation”, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 1808-1811, 2012. ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.028.

A. Chini, F. Soci, F. Fantini, A. Nanni, A. Pantellini, C. Lanzieri, D. Bisi, G. Meneghesso, E. Zanoni, Field plate related reliability improvements in GaN-on-Si HEMTs, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2153-2158, 2012. ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.040.

Persano, A. Tazzoli, P. Farinelli, G. Meneghesso, P. Siciliano, F. Quaranta, K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2245-2249, 2012. ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.008.

2011

M. Meneghini, N. Ronchi, A. Stocco, G. Meneghesso, U. K. Mishra, Y. Pei, and E. Zanoni, “Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method,” Electron Devices, IEEE Transactions on , vol.58, no.9, pp.2996-3003, Sept. 2011

M.Meneghini, C. De Santi, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni , “Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy”, Appl. Phys. Lett. 99, 093506, 2011, doi: 10.1063/1.3626280, ISSN: 00036951

Dal Lago, M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, “Degradation mechanisms of high-power white LEDs activated by current and temperature”, Microelectronics Reliability 51, 1742–1746, 2011

N.Trivellin, M. Meneghini, C. De Santi, S. Vaccari, G. Meneghesso, E. Zanoni, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, “Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency”, Microelectronics Reliability 51, 1747–1751, 2011

S. Bonora, M. Meneghini, A. Marrani, M. Bassi, I. Falco, and E. Zanoni, “Photostrictive effect in a polyvinylidene fluoride-trifluoroethylene copolymer”, Appl. Phys. Lett. 99, 033506, 2011

Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, A. Chini, “An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters”, Journal of ELECTRONIC MATERIALS, vol. 40, p. 362-368, ISSN: 0361-5235, 2011. doi: 10.1007/s11664-010-1434-7

Fabio Alessio Marino, and Gaudenzio Meneghesso, “WJM Multifunctional Field-Effect Transistor for High-Density Integrated Circuits”, IEEE Electron Device Letters, vol. 32, No. 3, pp. 264-266, 2011 DOI 10.1109/LED.2010.2099097

N. Wrachien, A. Cester, Y. Q. Wu,  P. D. Ye, E. Zanoni, and G. Meneghesso, “Effects of Positive and Negative Stresses on III–V MOSFETs With Al2O3 Gate Dielectric”, IEEE Electron Device Letters, vol. 32, No. 4, pp. 488-490, 2011 DOI 10.1109/LED.2011.2106107

A.Tazzoli and G. Meneghesso, “Acceleration of Microwelding on Ohmic RF-MEMS Switches”,  IEEE Journal of MicroElectroMechanical Systems, vol. 20, No. 3, pp. 552-554, 2011 DOI 10.1109/JMEMS.2011.2140360

F. Solazzi, A. Tazzoli, P. Farinelli, A. Faes, V. Mulloni, B. Margesin, G. Meneghesso, “Design and Characterization of an Active Recovering Mechanism for High Performance RF MEMS Redundancy Switches”, International Journal of Microwave and Wireless Technologies, Vol. 3, no.  5, pp. 539 –546, 2011, doi:10.1017/S1759078711000675

D. Bari, N. Wrachien, A. Cester, G. Meneghesso, R. Tagliaferro, S. Penna, T. M. Brown, A. Reale, A. Di Carlo, “Thermal Stress Effects on Dye-Sensitized Solar Cells (DSSCs)”, Microelectronics Reliability, Vol. 51, pp. 1762–1766, 2011. doi:10.1016/j.microrel.2011.07.061

Iannacci, A. Faes, A. Repchankova, A. Tazzoli, and G. Meneghesso, “An active heat-based restoring mechanism for improving the reliability of RF MEMS switches”, Microelectronics Reliability, Vol. 51, n. 9-11, pp. 1869-1873, doi. 10.1016/j.microrel.2011.06.019, ISSN 0026-2714

A. Massenz, M. Barbato, V. Giliberto, B. Margesin, S. Colpo, and G. Meneghesso, “Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test”, Microelectronics Reliability, Vol. 51, n. 9-11,  pp. 1887–1891, 2011, doi:10.1016/j.microrel.2011.07.002

A. Tazzoli, I. Rossetto, E. Zanoni, D. Yufeng, T. Tomasi, G. Meneghesso, “ESD Sensitivity of a GaAs MMIC Microwave Power Amplifier”, Microelectronics Reliability, Vol. 51, n. 9-11, pp. 1602-1607, 2011. doi: doi:10.1016/j.microrel.2011.06.051

A. Tazzoli, M. Barbato, V. Ritrovato, G. Meneghesso, “A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures”, Journal of Electrostatics, Journal of Electrostatics 69 (2011), pp. 547-553. doi:10.1016/j.elstat.2011.07.007

N. Wrachien, A. Cester, D. Bari, J. Kovac, J. Jakabovic, D. Donoval, G. Meneghesso, “Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors”, IEEE Transaction on Nuclear Science, Vol. 58,  No. 6, pp. 2911-2917, 2011. doi: 10.1109/TNS.2011.2170432

Fabio Alessio Marino, and Gaudenzio Meneghesso “Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits”,  IEEE Transaction on Electron Devices, Vol. 58,  No. 12, pp. 4226-4234, 2011. doi. 10.1109/TED.2011.2169067

2010

M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A review on the physical mechanisms that limit the reliability of GaN-based LEDs”, IEEE Transactions on Electron Devices vol. 57, no. 1, pp. 108-118, 2010

A.Pinato, A. Cester, M. Meneghini, N. Wrachien, A. Tazzoli, S. Xia, V. Adamovich, M. S. Weaver, J. J. Brown, E. Zanoni, G. Meneghesso, “Impact of Trapped Charge and Interface Defects on the Degradation of the Optical and Electrical Characteristics in NPD/Alq3 OLEDs”, IEEE Transactions on Electron Devices vol. 57, no. 1, pp. 178-187, 2010

N.Trivellin, M. Meneghini, E. Zanoni, G. Meneghesso, K. Orita, M. Yuri, T. Tanaka, and D. Ueda, “Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate”, Phys. Status Solidi A Vol. 207, No. 1, pp. 41–44, 2010

M. Meneghini, N. Trivellin, R. Butendeich, U. Zehnder, B. Hahn, G. Meneghesso, and E. Zanoni, “Reliability of InGaN-based LEDs submitted to reverse-bias stress”, Phys. Status Solidi C 7, No. 7–8, pp. 2208–2210, 2010

M. Meneghini, N. Trivellin, K. Orita, M. Yuri, T. Tanaka, D. Ueda, E. Zanoni, G. Meneghesso, “Reliability evaluation for Blu-Ray laser diodes”, Microelectronics Reliability 50, 467–470, 2010

M.Meneghini, A. Tazzoli, R. Butendeich, B. Hahn, G. Meneghesso, and E. Zanoni, “Soft and Hard Failures of InGaN-Based LEDs Submitted to Electrostatic Discharge Testing”, IEEE Electron Device Letters, vol. 31, no. 6, pp. 579-581, 2010

M.Meneghini, M. Scamperle, M. Pavesi, M. Manfredi, T. Ueda, H. Ishida, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni, “Electron and hole-related luminescence processes in gate injection transistors”, Appl. Phys. Lett. 97, 033506, 2010

G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, A. Chini and E. Zanoni, “Reliability issues of Gallium Nitride High Electron Mobility Transistors”, International Journal of Microwave and Wireless Technologies, Vol. 2, No. 01, pp 39-50, 2010

M.Meneghini, D. Barbisan, Y. Bilenko, M. Shatalov, J. Yang, R. Gaska, G. Meneghesso, E. Zanoni, “Defect-related degradation of Deep-UV-LEDs”, Microelectronics Reliability 50, 1538–1542, 2010

M.Meneghini, A. Stocco, N. Ronchi, F. Rossi, G. Salviati, G. Meneghesso, and E. Zanoni, “Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett. 97, 063508, 2010

M. Meneghini, D. Barbisan, L. Rodighiero, G. Meneghesso, and E. Zanoni, “Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes”, Appl. Phys. Lett. 97, 143506, 2010

M.Meneghini, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni, “Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements”, Appl. Phys. Lett. 97, 263501, 2010

A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys, “Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs”, IEEE Transaction on Nuclear Science. vol. 54, no. 4, pp. 1924 – 1932, 2010. doi: 10.1109/TNS.2010.2040196

A. Tazzoli, M. Barbato, F. Mattiuzzo, V. Ritrovato, G. Meneghesso, “Study of the Actuation Speed, Bounces Occurrences, and Contact Reliability of Ohmic RF-MEMS Switches”, Microelectronics Reliability, Vol. 50, pp.1604–1608, 2010. DOI:10.1016/j.microrel.2010.07.034.

A. Tazzoli, M. Cordoni, P. Colombo, C. Bergonzoni, G. Meneghesso, “Time-To-Latch-Up Investigation of SCR Devices as ESD Protection Structures on 65 nm Technology Platform”, Microelectronics Reliability, Vol. 50,  pp.1373–1378, 2010. DOI:10.1016/j.microrel.2010.07.034.

J. Iannacci, A. Repchankova, A. Faes, A. Tazzoli, G. Meneghesso and Gian-Franco Dalla Betta “Enhancement of RF-MEMS Switch Reliability Through an Active Anti-Stiction Heat-Based Mechanism”, Microelectronics Reliability, Vol. 50,  pp.1599–1603, 2010. DOI:10.1016/j.microrel.2010.07.034.

Cester, D. Bari, J. Framarin, N. Wrachien, G. Meneghesso, S. Xia, V. Adamovich, J. J. Brown, “Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED”, Microelectronics Reliability, Vol. 50, pp.1866–1870, 2010. DOI:10.1016/j.microrel.2010.07.034.

Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, A. Chini, “Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress”, Microelectronics Reliability, Vol. 50, pp.1523–1527, 2010. DOI:10.1016/j.microrel.2010.07.034.

G.Meneghesso, F. Rossi, G. Salviati, M. J. Uren, E. Muñoz, and E. Zanoni, “Correlation between kink and cathodoluminescence spectra in AlGaN/GaN High Electron Mobility Transistors”, Applied Physics Letters vol. 96, pp. 263512 (3 pages), 2010; doi:10.1063/1.3459968

Iannacci, A. Repchankova, A. Faes, A. Tazzoli, G. Meneghesso and M. Niessner, “Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches ” Procedia Engineering, 05 (2010) 734–737, 2010  (Proc. Eurosensors XXIV, September 5-8, 2010, Linz, Austria), doi:10.1016/j.proeng.2010.09.213

D.A. Cullen, D. J. Smith, A. Stocco, G. Meneghesso, E. Zanoni, M.R. McCartney “Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography”, Microscopy and Microanalysis 2010, Vol. 16, pp. 800-801, 2010. doi:10.1017/S1431927610056722

2009

M. Meneghini, N. Trivellin, G. Meneghesso, L. Trevisanello, E. Zanoni, K. Orita, M. Yuri, D. Ueda, “Analysis of the role of current in the degradation of InGaN-based laser diodes”, Phys. Status Solidi (c) 6, S2, S844–S847, 2009

Meneghini, N. Trivellin, K. Orita, M. Yuri, D. Ueda, E. Zanoni, and G. Meneghesso, “Analysis of the role of current, temperature, and optical power in the degradation of InGaN-based laser diodes”, IEEE Transactions on Electron Devices, vol. 56, no. 2, pp. 222-228, 2009

M.Meneghini, N. Trivellin, K. Orita, S. Takigawa, M. Yuri, T. Tanaka, D. Ueda, E. Zanoni, and G. Meneghesso, “Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination”, IEEE Electron Device Letters, vol. 30, no. 4, pp. 356-358, 2009

M.Pavesi, F. Rossi, M. Manfredi, G. Salviati, M. Meneghini and E. Zanoni, “A new approach to correlate transport processes and optical efficiency in GaN-based LEDs”, Journal of Physics D: Applied Physics, 42, 045110, 2009

Rigutti, L Basiricò, A. Cavallini, M. Meneghini, G. Meneghesso, and E Zanoni, “Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes”, Semicond. Sci. Technol. 24, 055015, 2009

E.Zanoni, F. Danesin, M. Meneghini, A. Cetronio, C. Lanzieri, M. Peroni, and G. Meneghesso, “Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing”, IEEE Electron Device Letters, vol. 30, no. 5, pp. 427-429, 2009

M. Meneghini, U. Zehnder, B. Hahn, G. Meneghesso, and E. Zanoni, “Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress”, IEEE Electron Device Letters, vol. 30, no. 10, pp. 1051-1053, 2009

N. Trivellin, M. Meneghini, G. Meneghesso, E. Zanoni, K. Orita, M. Yuri, T. Tanaka, D. Ueda, “Reliability analysis of InGaN Blu-Ray Laser Diode”, Microelectronics Reliability, Volume 49, Issues 9-11, September-November 2009, Pages 1236-1239

Meneghini, N. Trivellin, M. Pavesi, M. Manfredi, U. Zehnder, B. Hahn, G. Meneghesso, and E. Zanoni, “Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes”, Appl. Phys. Lett. 95, 173507, 2009

M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni., U. Zehnder, B. Hahn, “A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes”, J. Appl. Phys. 106, 114508, 2009

G.Meneghesso, F. Zanon, M. J. Uren, E. Zanoni, “Anomalous kink effect in GaN High Electron Mobility Transistors”, IEEE Electron Device Letters, vol. 30, no. 2, pp. 100-102, February 2009

Chini, M. Esposto, G. Meneghesso, and E. Zanoni., “Evaluation of GaN HEMTs degradation by means of Pulsed I-V, leakage and DLTS measurements”, IEE Electronics Letters Vol. 45, No. 8, pp. 426 – 427, 2009. Doi: 10.1049/el.2009.0533

Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, Ben Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, IEEE Transactions on Nuclear Science, Vol. 56, No. 4, pp. 2205-2212, August 2009

N. Ronchi, F. Zanon, A. Stocco, A. Tazzoli, E. Zanoni and G. Meneghesso “Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long term DC life test”, Microelectronics Reliability, Vol. 49, pp. 1207 – 1210, 2009

Tazzoli, L. Cerati, A. Andreini, G. Meneghesso “Breakdown Characterization of Gate Oxides in 35 and 70 Å BCD8 Smart Power Technology”, Microelectronics Reliability, Vol. 49, pp. 1111 – 1115, 2009.

A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, “Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation”, IEEE Electron Device Letters,  Vol. 30,  No. 10,  pp. 1021 – 1023, 2009.

Tazzoli, E. Autizi, V. Peretti, G. Meneghesso, “Stiction Induced by Dielectric Breakdown on rf-MEMS Switches”, in “New Developments in Micro Electro Mechanical Systems for Radio Frequency and Millimeter Wave Applications” Editors: G. Kostantinidis, A. Muller, D. Dascalu, R. Plana, vol. 15, Editura Academiei Romane, Bucarest, 2009, pp. 311-320. ISBN: 978-973-27-1813-1, ISSN: 0256-5277,

Griffoni, S. Gerardin, P.J. Roussel, R. Degraeve, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys, “A Statistical Approach to Microdose Induced Degradation in FinFET Devices”, IEEE Transaction on Nuclear Science, Vol. 56, no. 6, pp. 3285-3292, 2009.

Kumar, M. J.; Lunardi, L.; Meneghesso, G.; Pearton, S. J.; Schubert, E. F.; “Guest Editorial Special Issue on Light-Emitting Diodes” IEEE Transactions on Electron Devices,  Vol. 57,  No 1, pp 7 – 11 January 2010. Doi: 10.1109/TED.2009.2035570

Claeys, S. Put, A. Griffoni, A. Cester, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, “Impact of radiation on the operation and reliability of deep submicron CMOS”, ECS Transactions, The Electrochemical Society, 27 (1) 39-46 (2010) doi: 10.1149/1.3360593 , ISSN: 1938-5862

2008

L Rigutti, A Castaldini, M Meneghini and A Cavallini, “Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes”, Semiconductor Science and Technology Vol. 23, No. 2, pp. 025004-1-5, 2008

L.Trevisanello, M. Meneghini, U. Zehnder, B. Hahn, G. Meneghesso, E. Zanoni, “High temperature instabilities of ohmic contacts on p-GaN”, phys. stat. sol. (c) 5, No. 2, pp. 435–440, 2008

M.Pavesi, M. Manfredi, F. Rossi, M. Meneghini, G. Meneghesso, and E. Zanoni, and U. Zehnder, “Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes”, J. Appl. Phys., Vol. 103, pp. 024503 -1-5, 2008

M.Meneghini, L. Rigutti, L. Trevisanello, A. Cavallini, G. Meneghesso, and E. Zanoni, “A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs”, Journal of Applied Physics, Vol. 103, pp. 063703-1-7, 2008

M.Meneghini, G. Meneghesso, N. Trivellin, E. Zanoni, K. Orita, M. Yuri, and D. Ueda, “Extensive analysis of the degradation of Blu-Ray laser diodes”, IEEE Electron Device Letters, vol. 29, no. 6, pp. 578-581, 2008

M. Meneghini, L. Trevisanello, U. Zehnder, G. Meneghesso, and E. Zanoni, “Thermal degradation of InGaN/GaN LEDs ohmic contacts”, phys. stat. sol. (c) 5, No. 6, 2250–2253, 2008

F.Rossi, G. Salviati, M. Pavesi, M. Manfredi, M. Meneghini, E. Zanoni, U. Zehnder, “Field-dependence of the carrier injection mechanisms in InGaN Quantum Wells: its effect on the luminescence properties of blue Light Emitting Diodes”, J. Appl. Phys. Vol. 103, No. 9, 093504-1-7, 2008

Faqir, G. Verzellesi, A. Chini, F. Fantini, F. Danesin, G. Meneghesso, E. Zanoni, C. Dua, “Mechanisms of RF Current Collapse in AlGaN-GaN High Electron Mobility Transistors”, Invited Paper: IEEE Trans. on Device and Material Reliability, vol. 8, no. 2, pp. 240-247, 2008

Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini “Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMT”, IEEE Transaction on Electron Devices, vol. 55, no. 7, pp. 1592-1602, 2008

A. Tazzoli, G. Meneghesso, F. Zanon, F. Danesin, E. Zanoni, P. Bove, R. Langer, J. Thorpe, “Electrical Characterization and Reliability Study of HEMTs on Composite Substrates under High Electric Fields”,  Microelectronics Reliability, Vol. 47, No. 9-11, pp. 1361-1365, 2008

F. Danesin, A. Tazzoli, F. Zanon, G. Meneghesso, E, Zanoni, A. Cetronio, C. Lanzieri, S. Lavanga, M. Peroni, P. Romanini, “Thermal Storage Effects on AlGaN/GaN HEMT”, Microelectronics Reliability, Vol. 47, No. 9-11, pp. 1370-1374, 2008

Orietti, N. Montemezzo, S. Buso, G. Meneghesso, A. Neviani, G. Spiazzi, “Reducing the EMI susceptibility of a Kuijk Bandgap”, IEEE Transactions on Electromagnetic Compatibility Vol. 50, No. 4, pp. 876-886, 2008

A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, IEEE Transactions on Nuclear Science Vol.55, N. 6, pp. 3182-3188, Dec. 2008

M.-A. di Forte Poisson, M. Magis, M. Tordjman, J. Di Persio, R. Langer, L. Toth, B. Pecz, M. Guziewicz, J. Thorpe, R. Aubry, E. Morvan, N. Sarazin, C. Gaquière, G. Meneghesso, V. Hoel, J.-C. Jacquet and S. Delage, “GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application” Journal of Crystal Growth Volume 310, Issue 23, 15 November 2008, Pages 5232-5236

2007

M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso and E. Zanoni, “High temperature electro-optical degradation of InGaN/GaN HBLEDs”, Microelectronics Reliability, vol. 47, Issues 9-11, pp. 1625-1629, 2007

M. Meneghini, L.-R. Trevisanello, U. Zehnder, G. Meneghesso, and Enrico Zanoni, “Reversible degradation of ohmic contacts on p-GaN for application in high brightness LEDs”, IEEE Transaction on Electron Devices, vol. 54, no. 12, pp. 3245 – 3251, 2007

A. Tazzoli, F.A. Marino, M. Cordoni, A. Benvenuti, P. Colombo, E. Zanoni and G. Meneghesso, “Holding voltage investigation of advanced SCR-based protection structures for CMOS technology”, Microelectronics Reliability, Vol. 47, No. 9-11, September-November 2007, Pages 1444-1449, (Also presented at  ESREF’07 17th European Symposium on Reliability and Failure Analysis,  and awarded with the BEST PAPER AWARD)

Faqir, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Cavallini, A. Castaldini, N. Labat, A. Touboul, C. Dua, “Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs”, Microelectronics Reliability, Vol. 47, No. 9-11, 2007, Pages 1639-1642

A. Tazzoli, V. Peretti, G. Meneghesso, “Electrostatic Discharge and Cycling effects on Ohmic and capacitive RF-MEMS Switches”, IEEE Transaction on Device and Material Reliability, vol. 7, no. 3, pp. 429-437, 2007

S. Gerardin, A Griffoni, A. Tazzoli, A Cester, G. Meneghesso, A. Paccagnella, “Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide”, IEEE Transaction on Nuclear Science, Vol. 54, No. 6, pp. 2204-2209, Dec. 2007,

2006

F.Rossi, G. Salviati, M. Pavesi, M. Manfredi, M. Meneghini, G. Meneghesso, E. Zanoni and U. Strauß, “Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence”, Semicond. Sci. Technol., vol. 21, pp. 638–642, 2006

F.Rossi, M. Pavesi, M. Meneghini, G. Salviati, , M. Manfredi, G. Meneghesso, A. Castaldini, A. Cavallini, L. Rigutti, , U. Strass, U. Zehnder, and E. Zanoni, “Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes”, J. Appl. Phys. vol. 99, pp. 053104-1-053104-7, 2006

M.Pavesi, M. Manfredi, F. Rossi, M. Meneghini, E. Zanoni, U. Zehnder, and U. Strauss, “Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes”, Appl. Phys. Lett., vol. 89, pp. 041917-041919, 2006

M. Meneghini, S. Podda, A. Morelli, R. Pintus, L. Trevisanello, G. Meneghesso, M. Vanzi and E. Zanoni, “High brightness GaN LEDs degradation during dc and pulsed stress”, Microelectronics Reliability, Vol. 46, no. 9-11, pp. 1720-1724, 2006

M.Meneghini, L.-R. Trevisanello, U. Zehnder, T. Zahner, U. Strauss, G. Meneghesso, and Enrico Zanoni, “High-temperature degradation of GaN LEDs related to passivation”, IEEE Transaction on Electron Devices, vol. 53, no. 12, pp. 2981 – 2987, 2006

M. Meneghini, L. -R. Trevisanello, G. Meneghesso, E. Zanoni, F. Rossi, M. Pavesi, U. Zehnder and U Strauss, “High-temperature failure of GaN LEDs related with passivation”, Superlattices and Microstructures, Vol. 40, no. 4-6 , pp. 405-411, 2006

G. Meneghesso, F. Rampazzo, P. Kordoš, G. Verzellesi, E. Zanoni, “Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs,” IEEE Transaction on Electron Devices, Vol. 53, No. 12, pp. 2932-2941, 2006

A. Cester, S. Gerardin, A. Tazzoli, G. Meneghesso, “Electrostatic Discharge Effects in Ultrathin Gate Oxide MOSFETs”, IEEE Transaction on Device and Material Reliability, V.6, No.1, pp.87-94, 2006

Suemitsu, Y. K Fukay, M. Tokumitsu, F. Rampazzo, G. Meneghesso, E. Zanoni, “Improved Stability in Wide-recess InP HEMTs by means of a fully passivated two-step-recess gate”, IEICE Electronics Express, Vol. 3, No. 13, 2006

Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Paccagnella, “Degradation Induced by 2-MeV Alpha Particles on AlGaN/GaN High Electron Mobility Transistors”, Microelectronics Reliability Vol. 46 pp. 1750–1753, 2006

Meneghesso, F. Rampazzo, P. Kordoš, G. Verzellesi, E. Zanoni, “Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs, IEEE Transaction on Electron Devices, Vol. 53, No. 12, pp. 2932-2941, 2006

2005

Castaldini, L.Cavallini, L. Rigutti, M. Meneghini, S. Levada, G. Meneghesso, E. Zanoni, V. Härle, T. Zahner, U. Zehnder, “Short term instabilities of InGaN GaN light emitting diodes by capacitance–voltage characteristics and junction spectroscopy”, Phys. Stat. Sol. (c) 2, no. 7, pp. 2862–2865, 2005

S.Levada, M. Meneghini, G. Meneghesso. E. Zanoni, “Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model”, IEEE Transactions on Device and Materials Reliability, vol. 5, no. 4, pp. 688-693, 200

R. Pierobon, G. Meneghesso, E. Zanoni, F. Roccaforte, F. La Via, V. Raineri, ‘Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights’, Material Science Forum, Vol.483-485, pp. 933-936, 2005, doi: 10.4028/www.scientific.net/MSF.483-485.933

J. Bernát, R. Pierobon, M. Marso, J. Flynn, G. Brandes, G. Meneghesso, E. Zanoni, P. Kordoš, “Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs”,Phys. Status Sol. (C) Vol 02, No. 7, pp. 2676-2679, 2005.

A. Castaldini, A. Cavallini, L. Rigutti, M. Meneghini, S. Levada, G. Meneghesso, E. Zanoni, V. Härle, T. Zahner, and U. Zehnder, “Short-term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy”Phys. Status Sol. (C) Vol 02, No. 7, pp. 2862-2865, 2005.

G. Verzellesi, G. Meneghesso, A. Chini, E. Zanoni, C. Canali, “DC-to-RF dispersion in GaAs and GaN based Heterostructure FETs: Performance and reliability issues”,Microelectronics Reliability, Vol. 45, pp. 1585-1592, 2005 (also INVITED Paper at ESREF 2005).

P. Kordoš, J. Bernát, M. Marso, and H. Lüth, F. Rampazzo, G. Tamiazzo, R. Pierobon, and G. Meneghesso, “Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors”, Applied Physics Letters Vol. 86, p. 253511, 2005.

S. Bychikhin and D. Pogany, L. K. J. Vandamme, G. Meneghesso and E. Zanoni, “Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes”, Journal of Applied Physics Vol. 97, p. 123714 1-7, 2005

A. Tazzoli, G. Meneghesso, E. Zanoni “A Novel fast and Versatile Temperature Measurement System for LDMOS Transistors”, Microelectronics Reliability Vol. 45, pp. 1742-1745, 2005

S. Levada, M. Meneghini, G. Meneghesso, E. Zanoni, “Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model”, IEEE Transaction on Device and Material Reliability, Vol.5, No.4, pp. 688-693, 2005.

2004

  1. Salviati, F. Rossi, N. Armani, M. Pavesi, M. Manfredi, G. Meneghesso, E. Zanoni, A. Castaldini, and A. Cavallini, “Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs”, European Physical Journal – Applied Physics vol. 23 no. 1-3, pp. 345-348, 2004

R61    M. Pavesi, M. Manfredi, G. Salviati, N. Armani, F. Rossi, G. Meneghesso, S. Levada, E. Zanoni, S. Du and I. Eliashevich, “Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress”, Applied Physics Letters, Vol. 84, N. 17, 2004

R62    G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, E. Zanoni, ‘Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs’, IEEE Trans. on Electron Devices, Vol. 51, No. 10, pp. 1554-1561, October 2004.

R63    F. Rampazzo, R. Pierobon, D. Pacetta, C. Gaquiere, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni, ‘Hot carrier aging degradation phenomena in GaN based MESFETs’, Microelectronics Reliability, Vol. 44, pp. 1375-1380, 2004

R64    C. Corvasce, M. Ciappa, D. Barlini, S.Sponton, G. Meneghesso, W. Fichtner, ‘Experimental investigation of self-heating effects in semiconductor resistors during TLP pulses”, Microelectronics Reliability, Vol. 44, pp. 1873-1878, 2004

R65   F. Rossi, N. Armani, G. Salviati, M. Pavesi, G. Meneghesso, S. Levada, and E. Zanoni, “The role of Mg complexes in the degradation of InGaN-based LEDs”, Superlattices and Microstructures, Vol. 36, No. 4-6, pp. 859-868, Oct.-Dec. 2004,

2003

Savian, D.; Di Carlo, A.; Lugli, R.; Peroni, M.; Cetronio, C.; Lanzieri, C.; Meneghesso, G.; Zanoni, E.;  “Channel temperature measurement of PHEMT by means of optical probes”, Electronics Letters , Vol. 39 No. 2 pp. 247 -248, 23 Jan 2003.

G. Meneghesso, A. Chini,  M. Maretto, E. Zanoni “Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs”, IEEE Transactions on Electron Devices, Vol. 50, No. 2, pp. 324 -332, Feb. 2003

A. Chini, R. Coffie, G. Meneghesso, E. Zanoni, D. Buttari, S. Heikman, S. Keller, and U. K. Mishra “A 2.1A/mm Current Density AlGaN/GaN HEMT”, Electronics Letters, V.39  N. 7, pp. 625 -626, 3 2003,

Verzellesi, G.; Basile, A.; Mazzanti, A.; Canali, C.; Meneghesso, G.; Zanoni, E.; “Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs”, Electronics Letters , Vol. 39, No. 10, pp. 810 – 811, 15 May 2003

G. Meneghesso, S. Levada, E. Zanoni, G. Scanmarcio, G. Mura, S. Podda, M. Vanzi, S. Du and I. Eliashevich “Reliability of visible GaN LEDs in plastic package“, Microelectronics Reliability, Vol. 43, pp. 1737-1742, 2003

G. Meneghesso, N. Novembre, E. Zanoni, L. Sponton, L. Cerati, G. Croce, “Optimization of ESD protection structures suitable for BCD6 smart power technology”, Microelectronics Reliability, Vol. 43, pp. 1588-1594, 2003

A. Sleiman, A. Di Carlo, P. Lugli, G. Meneghesso, E. Zanoni, J. L. Thobel, “Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs“, IEEE Transactions on Electron Devices, Vol. 50, No. 10, pp. 2009 -2014,  Oct. 2003.

G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Cavallini, M. Manfredi, S. Du, and I. Eliashevich, “Reliability analysis of GaN-Based LEDs for solid state illumination”, IEICE Transaction on Electronics, Vol. E86-C, No. 10, pp. 2032-2038, October 2003.

2002

D. Buttari, A. Chini, G. Meneghesso, E. Zanoni B. Moran, S. Heikman, N.Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars, and U. K. Mishra “ Systematic Characterization of Cl2 Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT’s ”, IEEE Electron Device Letters V.23, n.2, pp. 76-78, 2002, Doi: 10.1109/55.981311

D. Buttari, A. Chini, G. Meneghesso, E. Zanoni P. Chavarkar, R. Coffie, N.Q. Zhang, S. Heikman, L. Shen, H. Xing, C. Zheng, and U. K. Mishra “Systematic Characterization of Cl2 Reactive Ion Etching for Gate Recessing in AlGaN/GaN HEMT’s”, IEEE Electron Device Letters, v. 23, n.3, pp.118-120, 2002. Doi:  10.1109/55.988810

A Mazzanti, G. Verzellesi, C. Canali,  G. Meneghesso, E. Zanoni, “Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs”, IEEE Electron Device Letters, vol. 23 n. 7 , pp. 383 –385, 2002.  Doi: 10.1109/LED.2002.1015205

N. Armani, M. Manfredi, M. Pavesi, V. Grillo, G. Salviati, A. Chini, G. Meneghesso, and E. Zanoni, “Characterization of GaN-based metal-semiconductor field-effect transistors  by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy”, Journal of Applied Physics, Vol. 92, no. 5, pp. 2401-2405, 2002. Doi: 10.1063/1.1495536

Gaudenzio Meneghesso and Enrico Zanoni, “Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors”, Microel. Reliability, v. 42, pp. 685-708, 2002.

L. Sponton, L. Cerati, G. Croce G. Mura, S. Podda, M. Vanzi, G. Meneghesso, E. Zanoni, “ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology”, Microelectronics Reliability, Vol. 42, n. 9, pp. 1303-1306, 2002

G. Meneghesso, A. Cocco, G. Mura, S. Podda, M. Vanzi, “Backside Failure Analysis of  GaAs ICs after ESD tests”, Microelectronics Reliability, Vol. 42, n. 9, pp. 1293-1298, 2002.

T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki,  G. Meneghesso, and E. Zanoni “30-nm Two-Step-Recess Gate InP-Based InAlAs/InGaAs HEMT’s”, IEEE Transactions on Electron Devices, vol 49, no. 10, pp. 1694-1700, 2002. Doi: 10.1109/TED.2002.803646

G. Meneghesso, S. Levada, E. Zanoni, S. Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du, and I. Eliashevich “Failure modes and mechanisms of DC-aged GaN LEDs”, Physica Status Solidi (a), Vol. 194, No. 2, pp. 389-392, 2002.  DOI: 10.1002/1521-396X(200212)194:2<389::AID-PSSA389>3.0.CO;2-O

2001

Salviati, N. Armani, P. Cova, G. Meneghesso, E. Zanoni, “Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP based HEMTs”, Material Science and Engineering B, Vol. B26, pp. 289-293, 2001.

D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis and S.S.H. Hsu, “Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs”, IEEE Electron Device Letters, Vol. 22, No. 5, pp. 197-199, May 2001.

A. Sleiman, A. Di Carlo, L. Tocca, P. Lugli, G. Zandler G. Meneghesso, E. Zanoni, C. Canali A. Cetronio, M. Lanzieri, M. Peroni, “Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs” Semiconductor Science and Technology, Vol. 16, No 5, pp. 315-319, 2001.

G. Meneghesso, A. Chini, G. Verzellesi, A. Cavallini, C. Canali and E. Zanoni “Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs”, IEEE Electron Device Letters, Vol.22, No.9, pp. 432-434, 2001.

G. Meneghesso, S.Podda, M.Vanzi, “Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs”, Microelectronics Reliability, Vol. 41, pp. 1609-1614, 2001.

G. Meneghesso, A. Chini, E. Zanoni “Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs”, Microelectronics Reliability, Vol. 41, pp. 1579-1584, 2001.

L. Sponton, L. Cerati, G. Croce, F. Chrappan, C. Contiero, G. Meneghesso, E. Zanoni, “ESD protection structures for BCD5 smart power technologies”, Microel. Reliability, V. 41, pp.1683-1687, 2001.

G. Verzellesi G. Meneghesso, A. Cavallini and E. Zanoni, “Trap Energetic and Spatial Localization in Buried-Gate 6H-SiC JFET’s by Means of Numerical Device Simulation”, IEEE Electron Device Letters . Vol. 22, No. 12, pp. 579-581, December 2001

N. Armani, A. Chini, M. Manfredi, G. Meneghesso, M. Pavesi, V. Grillo, G. Salviati and E. Zanoni “ Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy”, Inst. Phys. Conf. Ser. No 169, pag. 503 (2001)

2000

E. Zanoni, G. Meneghesso, A. Bortoletto, M. Maretto, G. Massari, D. Buttari “On-state breakdown measurements in GaAs MESFETs and InP-based HEMTs”, Inst. Phys. Conf.  Ser. No. 166 Chapter 5, pp. 317-320, 2000.

G. Meneghesso, T. Grave, M. Manfredi, M. Pavesi, C. Canali, E. Zanoni, , “Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence” IEEE Transaction on Electron Devices, Vol. 47, No. 1, pp. 2-10, 2000

E. Zanoni, G. Meneghesso and R. Menozzi “Electroluminescence and other Diagnostic Techniques for the Study of Hot Electron Effects in Compound Semiconductor Devices”Journal of Chrystal Growth, vol. 210, pp. 331-340, 2000, (Also  INVITED PAPER at 8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors Abstract of DRIP-VIII, p.XII-5, Narita, Japan, September 15-18, 1999)

A. Di Carlo, L. Rossi, P. Lugli, G. Zandler, G. Meneghesso, M. Jackson and E. Zanoni, “Monte Carlo study of the dynamic breakdown Effects in HEMT’s”, IEEE Electron Device Letters, Vol. 21, No. 4, pp. 149-151, 2000.

G. Meneghesso, M. Ciappa, P. Malberti, L. Sponton, G. Croce, C. Contiero, E. Zanoni “Overstress and Electrostatic Discharge in CMOS and BCD Integrated Circuits” Microelectronic Reliability, Vol. 40, pp. 1739-1746, 2000, (Also INVITED PAPER at ESREF’2000 11th European Symposium on Reliability and Failure Analysis, Dresden, Germany October 2-6, 2000)

G. Meneghesso, R. Luise, D. Buttari, A. Chini, H. Yokoyama, T. Suemitsu, E. Zanoni, “Parasitic effects and long term stability of InP-based HEMTs”, Microelectronics Reliability, Vol.40, pp. 1715-1720, 2000.

E. Zanoni, G. Meneghesso, A. Di Carlo, P. Lugli, L. Rossi “Factors limiting the maximum operating voltage of microwave devices”, International Journal of High Speed Electronics and Systems (IJHSES), March, Vol. 10, No. 01 : pp. 119-128, 2009. doi: 10.1142/S0129156400000155(In Proc. of WOFE 99, Advanced Workshop on Frontiers in Electronics, pp. 103-104, Villard de Lans (Grenoble), France, May 31-June 4, 1999.)