Fabiana Rampazzo received the degree in Physics from the University of Padova in 2001 working on characterization and reliability of M.O.S. capacitors with Silicon Carbide substrate. In 2005 she received the Ph.D. degree in electronics and telecommunications engineering with a thesis entitled “ Current instabilities, passivation effects and other reliability aspects in AlGaN/GaN HEMTs for Microwave applications”. She is working now as laboratory assistant in the same university. Her main research topics includes the characterization of microwave devices on III-V semiconductors such as GaN, GaAs and InP, with particular aim to transient phenomena; Electrical characterization of electronic devices grown on wide bandgap semiconductors (SiC and GaN); reliability studies of the long term stability of microwave devices with particular attention to their failure mode and mechanisms with also the help of S.E:M and F.I.B.
She was involved in the European Korrigan Project (Key Organisation for Research in Integrated Circuits in GaN Technology) concerning GaN HEMTs reliability, AlInWon, E2coGaN, ErG, Hiposwitch and ESAContract n. 40006310/12/NL/SFe “ Preliminary Validation of space compatible GaN foundry processes.
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