Research Interests
Characterization, modeling and reliability evaluation of Si and compound semiconductor devices as HEMTs, GITs, Natural SuperJunctions, MISFET, MESFET, Schottky Diodes, p-i-n diodes; Optoelectronic devices: LEDs, Laser Diodes, Quantum Dot Lasers, solar cells, photodetectors MEMS
Optoelectronics
GaN-based optoelectronic devices (LEDs, laser diodes) – Study of the physical mechanisms that limit the internal quantum efficiency…
read moreSilicon Photonics
Silicon-photonic devices represent the core elements for future compact and highly efficient telecommunication systems. Those devices exploit the…
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Investigation of advanced solar cells based on silicon: PERT, PERC, MWT, bifacial solar cells; optimization of the layout,…
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We have a new Instagram account! @acme_research_group Follow us, for latest news about conferences and ACME PhD life…
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We just published one of the first papers of the ECSEL/ UltimateGaN project. This is a collaboration with…
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For those working on Gan on Silicon for efficient power conversion, you can have a look at this…
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After ICNS-13 we decided to take the opportunity of summarizing some of the most recent results on vertical…
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Buffolo, JQE 2019, UNIPD, Bower’s group (UCSB) and Intel Study of performance and reliability of InAs quantum dot…
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Delegation of our PhD students together with electronic master students from #UNIPD visited ONSemiconductors and University of Gent in…
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