Matteo Buffolo was born in Vittorio Veneto (Italy) in November 1986. In 2014 he received a Master Degree in Electronic Engineering from the University of Padova, with a thesis focusing on the analysis of the degradation mechanisms of GaN-based mid-power white LEDs. On March 2018 he achieved its PhD at the Department of Information Engineering at the University of Padova, where he is actually working as a post-doc. His research interests focus on the reliability of lighting systems employing GaN-based devices (lasers and LEDs) and on the investigation of the degradation mechanisms that affect modern heterogeneous III-V/Silicon laser sources for integrated telecommunication applications.