Carlo De Santi
Carlo De Santi was born in Verona, Italy, in 1985. He obtained his Master’s degree in electronic engineering in 2010 and his Ph.D. in Information and Communication Science and Technology in 2014. He currently holds a post-doc position in the microelectronics group at the University of Padova.
His main research activities are characterization, physical modeling and reliability of various GaN-, GaAs-, InP-, Ga2O3-, CdTe- and Si-based lateral and vertical electronic and optoelectronic devices for high frequency, power conversion, lighting and signal transmission applications, including High Electron Mobility Transistors (HEMTs), Gate Injection Transistors (GITs), Natural SuperJunctions (NSJs), Metal-Insulator-Semiconductor transistors (MISs), Schottky diodes, Light Emitting Diodes (LEDs), Laser Diodes (LDs), Quantum Dot laser diodes (QDLs), p-n diodes, solar cells and photodiodes.
He is author of more than 40 peer-reviewed journal papers, 60 contributions in conference proceedings and 5 book chapters.
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