Model for Gate Capacitance of trench GaN Mosfet
We just published one of the first papers of the ECSEL/ UltimateGaN project. This is a collaboration with IMEC , […]
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GaN on Silicon for Efficient power conversion
For those working on Gan on Silicon for efficient power conversion, you can have a look at this paper that
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review
After ICNS-13 we decided to take the opportunity of summarizing some of the most recent results on vertical GaN reliability
Innovative devices: InAs QD lasers for silicon photonics
Buffolo, JQE 2019, UNIPD, Bower’s group (UCSB) and Intel Study of performance and reliability of InAs quantum dot lasers for