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Model for Gate Capacitance of trench GaN Mosfet
Articles Research

Model for Gate Capacitance of trench GaN Mosfet

By acmeadmin
On February 13, 2020June 10, 2020

We just published one of the first papers of the ECSEL/ UltimateGaN project. This is a collaboration with IMEC , on GaN-on-Si vertical devices for efficient power conversion . Here we propose a model for the gate capacitance, based on combined experimental…

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GaN on Silicon for Efficient power conversion
Articles Research

GaN on Silicon for Efficient power conversion

By acmeadmin
On January 31, 2020May 5, 2020

For those working on Gan on Silicon for efficient power conversion, you can have a look at this paper that we just published in collaboration with Imec. By combined measurements and simulations we discuss the nature of vertical leakage at the AlN/Si…

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#GaN#Gan on Silicon#Power conversion
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review
Articles Research

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

By acmeadmin
On January 28, 2020May 5, 2020

After ICNS-13 we decided to take the opportunity of summarizing some of the most recent results on vertical GaN reliability (a relatively unexplored field) in this feature paper. Many thanks to our friends at Cornell and MIT for their friendly contribution! As…

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Innovative devices: InAs QD lasers for silicon photonics
Articles Research

Innovative devices: InAs QD lasers for silicon photonics

By acmeadmin
On January 17, 2020January 17, 2020

Buffolo, JQE 2019, UNIPD, Bower’s group (UCSB) and Intel Study of performance and reliability of InAs quantum dot lasers for silicon photonics applications Model developed for competition between ground state and excited state emission Model developed for degradation  

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  • Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
  • Model for Gate Capacitance of trench GaN Mosfet
  • GaN on Silicon for Efficient power conversion
  • Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

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