We just published one of the first papers of the ECSEL/ UltimateGaN project. This is a collaboration with IMEC , on GaN-on-Si vertical devices for efficient power conversion . Here we propose a model for the gate capacitance, based on combined experimental…
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For those working on Gan on Silicon for efficient power conversion, you can have a look at this paper that we just published in collaboration with Imec. By combined measurements and simulations we discuss the nature of vertical leakage at the AlN/Si…
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After ICNS-13 we decided to take the opportunity of summarizing some of the most recent results on vertical GaN reliability (a relatively unexplored field) in this feature paper. Many thanks to our friends at Cornell and MIT for their friendly contribution! As…
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Buffolo, JQE 2019, UNIPD, Bower’s group (UCSB) and Intel Study of performance and reliability of InAs quantum dot lasers for silicon photonics applications Model developed for competition between ground state and excited state emission Model developed for degradation
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