Skip to content

  • Home
  • GaN HEMT
  • Optoelectronics
  • Silicon Photonics
  • Solar Cells
  • Group Members
  • Publications
  • Projects
  • Facilities
  • Join us

Author: acmeadmin

  • Home
  • acmeadmin
Instagram Account
Phdlifestyle

Instagram Account

By acmeadmin
On February 24, 2023February 24, 2023

We have a new Instagram account!  @acme_research_group Follow us, for latest news about conferences and ACME PhD life style.

read more
Uncategorized

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

By acmeadmin
On May 5, 2020

For those who work on GaN for energyefficiency , here’s a paper we just published with our partners at hashtag#UNIPD and hashtag#imec on the trapping phenomena in vertical GaN-on-Si FETs. The paper comes from the hashtag#UltimateGaN hashtag#H2020 hashtag#ECSEL project, and investigates the…

read more
Model for Gate Capacitance of trench GaN Mosfet
Articles Research

Model for Gate Capacitance of trench GaN Mosfet

By acmeadmin
On February 13, 2020June 10, 2020

We just published one of the first papers of the ECSEL/ UltimateGaN project. This is a collaboration with IMEC , on GaN-on-Si vertical devices for efficient power conversion . Here we propose a model for the gate capacitance, based on combined experimental…

read more
GaN on Silicon for Efficient power conversion
Articles Research

GaN on Silicon for Efficient power conversion

By acmeadmin
On January 31, 2020May 5, 2020

For those working on Gan on Silicon for efficient power conversion, you can have a look at this paper that we just published in collaboration with Imec. By combined measurements and simulations we discuss the nature of vertical leakage at the AlN/Si…

read more
#GaN#Gan on Silicon#Power conversion
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review
Articles Research

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

By acmeadmin
On January 28, 2020May 5, 2020

After ICNS-13 we decided to take the opportunity of summarizing some of the most recent results on vertical GaN reliability (a relatively unexplored field) in this feature paper. Many thanks to our friends at Cornell and MIT for their friendly contribution! As…

read more
Innovative devices: InAs QD lasers for silicon photonics
Articles Research

Innovative devices: InAs QD lasers for silicon photonics

By acmeadmin
On January 17, 2020January 17, 2020

Buffolo, JQE 2019, UNIPD, Bower’s group (UCSB) and Intel Study of performance and reliability of InAs quantum dot lasers for silicon photonics applications Model developed for competition between ground state and excited state emission Model developed for degradation  

read more
ON Semiconductor Visit
Phdlifestyle Uncategorized

ON Semiconductor Visit

By acmeadmin
On January 15, 2020May 5, 2020

Delegation of our PhD students together with electronic master students from #UNIPD visited ONSemiconductors and University of Gent in Belgium, great partners for #ERASMUS exchanges and #H2020 projects @ugent #semiconductors #electronics #deiunipd

read more

Recent Posts

  • Instagram Account
  • Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
  • Model for Gate Capacitance of trench GaN Mosfet
  • GaN on Silicon for Efficient power conversion
  • Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Address

Dipartimento di Ingegneria dell’Informazione

Via G. Gradenigo 6/B

35131 Padova

Italy

Top

Copyright © 2023 - WordPress Theme : By Sparkle Themes

  • Home
  • GaN HEMT
  • Optoelectronics
  • Silicon Photonics
  • Solar Cells
  • Group Members
  • Publications
  • Projects
  • Facilities
  • Join us