Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

After ICNS-13 we decided to take the opportunity of summarizing some of the most recent results on vertical GaN reliability (a relatively unexplored field) in this feature paper. Many thanks to our friends at Cornell and MIT for their friendly contribution! As a publication chair of IWN2020, I really hope most colleagues will take the opportunity of publishing on PSS also after IWN!

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