5G_GaN2 project will substantially lower the cost and power consumption, and increase the output power of mm-wave active antenna systems. The maximum output power and energy efficiency results will be possible thanks to the use of advanced Gallium Nitride (GaN) technology. In addition, low-cost packaging techniques for digital applications will be further developed to reach the cost and integration targets.
UltimateGaN will focus on the next generation of GaN technology particularly addressing six major objectives along and across the entire vertical value chain of power and RF electronics focusing on research and innovation in the fields of technology (including materials, equipment and device concepts), packaging, reliability and application.
Under the coordination of the European Defense Agency, several companies and universities have decided to make Europe become a leading supplier of GaN-on-SiC devices, competing with traditional centres. EuGaNiC will create a positive environment to develop a fully European value chain.
Intelligent Reliability 4.0
Intelligent Reliability 4.0 (iRel40)” has the ultimate goal of improving reliability of electronic components and systems by reducing failure rates along the entire value chain
Innovative Reliable Nitride-based Power devices and applications
Efficient power conversion systems are at the heart of the worldwide effort for a green economy, since they can minimize losses and save energy. Semiconductor power devices are a central part of any power conversion circuit and are ubiquitous in our daily lives: they transform voltages for a multitude of appliances, such as from the 220V AC mains to a 12V DC end-user appliance and enable to convert from DC (such as a battery in an electric car) to AC (such as a motor drive) and vice versa. Highly efficient power switching devices are a key for successful introduction of full electric vehicles into the market.The InRel-NPower project aims to contribute to this world-wide challenge through the development of GaN- and AlN-based power devices
Reliability physics of scaled, high-frequency GaN HEMT technology: a built-in reliability approach
The aim of this project is studying the physics of failure of 0.25 and 0.15 µm AlGaN/GaN HEMTs for space applications.
Enpowering GaN-on-SiC and GaN on SI technologies for the nexr challenging millimiter wave applications
The aim of this project is an in-depht analysis of the potential problems that may hinder the scaling of GaN HEMTs at or below 0.15um