Burn in reliability systems
Automated systems for accelerate lifetime tests (ALT) on several devices at the same time, under variable temperature and bias stress conditions..
Any combination of current, voltage, capacitance and admittance measurements, including but not limited to output characteristic of FETs, leakage current down to 100 fA, breakdown characteristic, capacitance-voltage and extrapolation of apparent charge profile, admittance vs frequency. Pulsers and amplifiers operating in various bias ranges for testing short-time effects, dynamic performance measurements and for avoiding self-heating related effects and failures. Maximum limits 10 A and 3000 V
Cryogenic probe stations
· Closed-cycle liquid helium cryogenic probe station: on-wafer measurements from 6.5K to 675K. · Flow liquid nitrogen cryogenic probe station: on-wafer measurements from 83K to 475K.
Two flow cryostats and two closed-cycle cryostats for carrying out the previously described measurements in the 12K-600K temperature range. 10 climatic chambers for storage stress.
Photoluminescence & Photocurrent
Photoluminescence: high sensitivity spatially- and spectrally-resolved photoluminescence under tunable monochromatic excitation or broadband excitation in a wide excitation power density range.Photocurrent: high sensitivity photocurrent under tunable monochromatic excitation or broadband excitation. Optional lock-in amplifier for further noise reduction
Deep Levels characterizations
Several systems for complementary deep level characterization techniques: capacitance deep level transient spectroscopy (C-DLTS), optical deep level transient spectroscopy (O-DLTS), deep level optical spectroscopy (DLOS), current deep level transient spectroscopy (I-DLTS), drain current transient spectroscopy (DCT), photocurrent spectroscopy, interface state density spectroscopy (charge pumping, Terman and photo-assisted).
Electroluminescence: high sensitivity spatially- and spectrally-resolved electroluminescence maps of electronic and optoelectronic devices in wide bias conditions, from the top side and from the back side. Dependence of the electroluminescence intensity and spectrum on bias, spectral range 200 nm – 1800 nm.
A 8.5 GHz Vector Spectrum Analyzer and and 9KHz-26.5 GHz Spectrum Analyzer can be used to perform reliability investigation on radio frequency micro electromechanical switches (RF MEMS) or on FETs. In particular, the reliability of the contact, the long term reliability of RF MEMS and FETs can be analyzed by investigating the RF performances of the devices at fixed frequencies.
The transmission line pulse system (TLP) is able to generate a voltage pulse with a pulse length of 100 ns, a voltage up to 2500V and a current up to 10A. This allows to investigate electrostatic discharge failure modes related to high voltage and high current..
Our profilometer able to extrapolate the topography of materials (nanometric resolution). Moreover it is able to extrapolate the vibration of moving membrane like microelectromechanical devices. The maximum bandwidth of the system is 1 Mhz.