OPTOELECTRONICS
at the acme Research Group
- Study of the physical mechanisms that limit the internal quantum efficiency of GaN-based LEDs and laser diodes emitting in the visible, NUV, and DUV spectral region, based on combined EL, differential carrier lifetime, deep level transient spectroscopy measurements.
- Analysis of the reliability-limiting mechanisms in GaN-based LEDs and lasers: characterization of defects, analysis of the failure modes, definition of models for the degradation processes, failure analysis; study of the effects of EOS and ESD at device and system level.
- System-level analysis of GaN LEDs and lasers, aimed at maximizing efficiency and reliability: thermal characterization (IR mapping, true estimation of junction temperature), optical simulation, the impact of driving conditions on system reliability, material issues related to high-power lighting systems (phosphors, package, lenses).
