Thomas Bordignon

Research Assistant

Thomas Bordignon was born in Bassano del Grappa, Italy, in 1996. He received the double Master’s degree in Materials Science from the University of Padova and from the Justus-Liebig Universit├Ąt (Giessen, Germany) in 2020, in the framework of the Double Degree Programme “Advanced Materials”. He graduated with a Master thesis on the synthesis of GaN Nanowires by Plasma-Assisted Molecular Beam Epitaxy, the realization of GaN-based NW back-gate Field Effect Transistors on p-doped Si (111) chips, and their electrical characterization at room and cryogenic temperature. He is currently working on GaN-based vertical HEMTs as research fellow in the ACME Lab, at the Department of Information Engineering of the University of Padova.