Thomas Bordignon was born in Bassano del Grappa, Italy, in 1996. He received the double Master’s degree in Materials Science from the University of Padova and from the Justus-Liebig Universität (Giessen, Germany) in 2020, in the framework of the Double Degree Programme “Advanced Materials”. He graduated with a Master thesis on the synthesis of GaN Nanowires by Plasma-Assisted Molecular Beam Epitaxy, the realization of GaN-based NW back-gate Field Effect Transistors on p-doped Si (111) chips, and their electrical characterization at room and cryogenic temperature. He is currently working on GaN-based vertical HEMTs as research fellow in the ACME Lab, at the Department of Information Engineering of the University of Padova.
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