Chandan Sharma has done his Ph.D. from the department of Physics, Indian Institute of Technology Delhi, India. He has also worked as research scholar in the MMIC Fabrication division, Solid State Physics Laboratory Delhi, India. During his Ph.D., he worked on fabrication and DC/pulse characterization of GaN material based HEMT devices. He also went to National Chiao Tung University (NCTU), Taiwan where he worked under Prof. Tian-li Wu on Reliability of various AlGaN/GaN HEMTs and MISHEMTs . His research interest includes III-V semiconductor materials and reliability studies on AlGaN/GaN based HEMT devices.
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