GaN HEMT

Characterization of GaN based transistors for RF and power applications, and of high-voltage/high current SiC devices.

Analysis of the trapping processes that limit the dynamic performance of the devices, based on current-DLTS, capacitance-DLTS, optical-DLTS, backgating investigation; development of physical models of the charge-trapping processes; study of the interface traps by C-V, Dit and Vth transient measurements; analysis of issues related to devices with Schottky, insulated and p-type gate.

Study of the lifetime-limiting mechanisms in GaN- and SiC-based transistors and diodes; time-dependent dielectric breakdown, instability of the p-type and insulator layers, hot electron effects (studied by electroluminescence), failure analysis.RF HEMT

 

RF HEMT

Characterization of transistors for RF and power applications

Analysis of the trapping processes that limit the dynamic performance:

 

     o     based on DLTS characterization

      o    development of physical models of the charge-trapping processes

       o   study of the interface traps by C-V, Dit and Vth transient measurements

        o   analysis of issues related to Schottky, insulated and p-type gate

 

  • Study of the lifetime-limiting mechanisms (reliability and degradation physics)

                o      time-dependent dielectric breakdown

               o       instability of the p-type and insulator layers

               o       hot electron and hard switching effects (studied also by electroluminescence)

              o        ElectroStatic Discharges (ESD) and Electrical OverStress (EOS)

              o        failure analysis